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Infineon Technologies Electronic Components Datasheet


60R385CP

IPD60R385CP



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60R385CP pdf
CoolMOS® Power Transistor
Features
• Worldwide best R ds,on in TO252
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V DS @ Tj,max
R DS(on),max
Q g,typ
IPD60R385CP
650 V
0.385
17 nC
PG-TO252
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
IPD60R385CP
Package
PG-TO252
Ordering Code
SP000307381
Marking
6R385P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
ID
I D,pulse
T C=25 °C
T C=100 °C
T C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E AS
E AR
I AR
dv /dt
I D=3.4 A, V DD=50 V
I D=3.4 A, V DD=50 V
V DS=0...480 V
Gate source voltage
V GS static
AC (f >1 Hz)
Power dissipation
Operating and storage temperature
P tot T C=25 °C
T j, T stg
Value
9.0
5.7
27
227
0.3
3
50
±20
±30
83
-55 ... 150
www.DRateavS.he2e.t24U.net
page 1
Unit
A
mJ
A
V/ns
V
W
°C
2009-04-15



No Preview Available !

60R385CP pdf
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Reverse diode dv /dt 4)
Symbol Conditions
IS
I S,pulse
T C=25 °C
dv /dt
Parameter
Symbol Conditions
IPD60R385CP
Value
5.2
27
15
Unit
A
V/ns
min.
Values
typ.
Unit
max.
Thermal characteristics
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient
R thJA
Soldering temperature,
reflowsoldering
T sold
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm2 cooling
area5)
reflow MSL3
Electrical characteristics, at T j=25 °C, unless otherwise specified
-
-
-
-
- 1.5 K/W
- 62
35 -
- 260 °C
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V GS(th) V DS=V GS, I D=0.34 mA 2.5
I DSS
I GSS
R DS(on)
RG
V DS=600 V, V GS=0 V,
T j=25 °C
V DS=600 V, V GS=0 V,
T j=150 °C
V GS=20 V, V DS=0 V
V GS=10 V, I D=5.2 A,
T j=25 °C
V GS=10 V, I D=5.2 A,
T j=150 °C
f =1 MHz, open drain
-
-
-
-
-
-
3 3.5
- 1 µA
10 -
- 100 nA
0.35 0.385
0.94
1.8
-
-
Rev. 2.2
page 2
2009-04-15



Part Number 60R385CP
Description IPD60R385CP
Maker Infineon Technologies - Infineon Technologies
Total Page 10 Pages
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60R385CP pdf
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