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IXYS
IXYS


60N20F

IXFH60N20F



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60N20F pdf
Advance Technical Information
HiPerRFTM
Power MOSFET
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFH60N20F
IXFT60N20F
VDSS =
ID25 =
RDS(on)
trr
200V
60A
38mΩ
200ns
TO-247
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Maximum Ratings
200
200
± 20
± 30
60
240
60
1.5
V
V
V
V
A
A
A
J
10 V/ns
320
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10
6
4
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
200 V
3.0 5.0 V
± 100 nA
50 μA
1.5 mA
38 mΩ
TO-268
TAB
GS
TAB
G = Gate D = Drain
S = Source TAB = Drain
Features
z International standard packages
z Avalanche Rated
z RF capable MOSFETs
z Double metal process for low gate
resistnace
z Low package inductance
z Fast intrinsic diode
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC-DC Converters
z Laser Drivers
z 13.5 Mhz industrial applications
z Pulse generation
© 2008 IXYS CORPORATION, All rights reserved
DS98885A(11/08)
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60N20F pdf
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Characteristic Values
Min. Typ.
Max.
18 26
S
2930
940
320
pF
pF
pF
15 ns
14 ns
42 ns
7.0 ns
Qg(on)
Qgs
Qgd
RthJC
RthCS
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
(TO-247)
100
25
46
0.25
nC
nC
nC
0.39 °C/W
°C/W
Source-Drain Diode
TJ = 25°C unless otherwise specified)
IS VGS = 0V
ISM Repetitive, pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1
trr IF = 25A, -di/dt = 100A/μs
QRM
IRM
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ.
Max.
60 A
240 A
1.5 V
200 ns
0.8 μC
10 A
IXFH60N20F
IXFT60N20F
TO-247 (IXFH) Outline
P
e
Dim. Millimeter
Min. Max.
A 4.7 5.3
AA12
2.2 2.54
2.2 2.6
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016
.819
.610
.031
.845
.640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 (IXFT) Outline
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592
by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
Free Datasheet http://www.0PDF.com



Part Number 60N20F
Description IXFH60N20F
Maker IXYS - IXYS
Total Page 2 Pages
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