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Anachip
Anachip


60N03

N-Channel Enhancement Mode Power MOSFET


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60N03 pdf
N-Channel Enhancement Mode Power MOSFET
AF60N03
„ Features
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching
- RoHS Compliant
- Pb Free Plating Product
„ Product Summary
BVDSS (V)
30
RDS(ON) (m)
12
ID (A)
45
„ General Description
The advanced power MOSFET provides the designer
with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-252 package is universally preferred for all
commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
„ Pin Assignments
(Front View)
3S
2D
1G
„ Pin Descriptions
Pin Name
S
G
D
Description
Source
Gate
Drain
„ Ordering information
A X 60N03 X X
Feature
PN Package
F :MOSFET
D: TO-252
„ Block Diagram
Packing
Blank : Tube or Bulk
A : Tape & Reel
DS
G
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.0 Sep 8, 2005
1/5



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60N03 pdf
N-Channel Enhancement Mode Power MOSFET
AF60N03
„ Absolute Maximum Ratings
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Parameter
ID Continuous Drain Current, VGS=10V
IDM
PD
TSTG
TJ
Pulsed Drain Current (Note 1)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
TC=25ºC
TC=100ºC
TC=25ºC
Rating
30
±20
45
32
120
44
0.352
-55 to 175
-55 to 175
Units
V
V
A
A
W
W/ºC
ºC
ºC
„ Thermal Data
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction- Ambient
Max.
Max.
Maximum
3.4
110
Units
ºC/W
ºC/W
„ Electrical Characteristics (TJ=25ºC unless otherwise noted)
Symbol
Parameter
Test Conditions
BVDSS
BVDSS/TJ
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Reference to 25ºC,
Coefficient
ID=1mA
Static Drain-Source
On-Resistance (Note 2)
VGS=10V, ID=20A
VGS=4.5V, ID=15A
Gate Threshold Voltage
VDS= VGS, ID=250uA
Forward Transconductance (Note 2) VDS=10V, ID=10A
Drain-Source Leakage Current
(TJ=25ºC)
VDS=30V, VGS=0V
Drain-Source Leakage Current
(TJ=175ºC)
VDS=24V, VGS=0V
Gate Source Leakage
VGS=±20V
Total Gate Charge (Note 2)
Gate-Source Charge
Gate-Drain (“Miller”) Charge
ID=20A
VDS=20V
VGS=4.5V
Turn-On Delay Time (Note 2)
Rise Time
Turn-Off Delay Time
Fall-Time
VDS=15V
ID=20A
RG=3.3, VGS=10V
RD=0.75
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V,
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Limits
Typ.
-
0.026
-
-
-
25
-
-
-
11.6
3.9
7
8.8
57.5
18.5
6.4
1135
200
135
Max.
-
-
12
25
3
-
1
250
±100
-
-
-
-
-
-
-
-
-
-
Unit
V
V/ºC
m
V
S
uA
nA
nC
nS
pF
„ Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage (Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Note 1: Pulse width limited by safe operating area.
Note 2: Pulse width < 300us, duty cycle < 2%.
Test Conditions
IS=45A, VGS=0V
IS=20A, VGS=0V,
dl/dt=100A/µs
Min. Typ. Max. Unit
- - 1.3 V
- 23.3 -
ns
- 16 - nC
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Sep 8, 2005
2/5



Part Number 60N03
Description N-Channel Enhancement Mode Power MOSFET
Maker Anachip - Anachip
Total Page 5 Pages
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