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Naina Semiconductor
Naina Semiconductor


504DCR

Phase Control Thyristor Capsules



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504DCR pdf
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Naina Semiconductor Ltd.
504DCR
Phase Control Thyristors (Capsule Type)
Features
Metal case with ceramic insulator
High current rating
Bifacial cooled
Center gate trigger
Applications
DC motor controls
AC controllers
DC power supplies
TO-200AB (A-PUK)
Voltage Ratings
Type
number
Voltage
Code
504DCR
04
06
08
10
12
14
16
VDRM/VRRM, Maximum Repetitive peak
& off-state voltage
V
400
600
800
1000
1200
1400
1600
VRSM, Maximum non-
repetitive peak voltage
V
500
700
900
1100
1300
1500
1700
IDRM/IRRM, Maximum at TJ =
TJ maximum
mA
20
Electrical Ratings (TJ = 250C, unless otherwise specified)
Parameters
Maximum on-state average current 180O sinusoidal conduction @ TC = 550C
Maximum RMS on-state current
Maximum peak, one cycle non-repetitive surge current
Maximum I2t for fusing @ t = 10ms
Maximum repetitive peak on and off-state voltage range
Maximum peak on-state voltage (TJ = 1250C, Ipeak = 1100A)
Maximum holding current @ TJ = 250C
Maximum latching current @TJ = 250C
Threshold voltage
Slope resistance
Switching Ratings (TJ = 250C, unless otherwise specified)
Parameters
Rate of rise of turn-on current @ TJ = TJ max, anode voltage ≤ 80% VDRM
Typical turn-on time
Typical turn-off time
Symbol
di/dt
td
tq
Symbol
IT(AV)
IT(RMS)
ITSM
I2t
VRRM, VDRM
VTM
IH
IL
VT0
rT
Values
500
785
6000
218
200 to 1600
1.3
200
800
0.81
0.52
Units
A
A
A
kA2s
V
V
mA
mA
V
mΩ
Values
1000
1.0
100
Units
A/µs
µs
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/



No Preview Available !

504DCR pdf
www.DataSheet.co.kr
Naina Semiconductor Ltd.
504DCR
Blocking Parameters (TJ = 250C, unless otherwise specified)
Parameters
Critical rate of rise of off-state voltage @ TJ = TJ max, linear to 80% rated
VDRM
Maxmimum peak reverse & off-state leakage current @ TJ = TJ max, rated
VDRM/VRRM applied
Symbol
dV/dt
IRRM, IDRM
Values
500
20
Triggering Parameters (TJ = 250C, unless otherwise specified)
Parameters
DC gate current to trigger
DC gate voltage to trigger
Symbol
IGT
VGT
Values
150
3.0
Thermal and Mechanical Specifications (TJ = 250C, unless otherwise specified)
Parameters
Symbol
Maximum operating junction temperature range
Maximum storage temperature range
TJ
TStg
Maximum thermal resistance, junction to case
Mounting torque
Rth(JC)
F
Approximate weight
WT
Values
- 40 to +125
- 40 to +125
0.08
4.2 .. 7.3
65
Units
V/µs
mA
Units
mA
V
Units
0C
0C
0C/W
kN
g
ALL DIMENSIONS IN MM
2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
Datasheet pdf - http://www.DataSheet4U.net/



Part Number 504DCR
Description Phase Control Thyristor Capsules
Maker Naina Semiconductor - Naina Semiconductor
Total Page 2 Pages
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