http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf




Directed Energy
Directed Energy


501N04A

RF Power MOSFET



No Preview Available !

501N04A pdf
Directed Energy, Inc.
An IXYS Company
N-Channel Enhancement Mode
Avalanche Rated
Low Qg and Rg
High dv/dt
Nanosecond Switching
DE150-501N04A
RF Power MOSFET
Preliminary Data Sheet
VDSS
ID25
RDS(on)
=
=
=
500 V
4.5 A
1.5
Symbol Test Conditions
Maximum Ratings
PDHS
=
80W
VDSS
www.DataSheet4U.coVmDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PDHS
PDAMB
TJ
TJM
Tstg
TL
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
gfs
TJ = 25°C to 150°C
500 V
TJ = 25°C to 150°C; RGS = 1 M
500 V
Continuous
±20 V
Transient
±30 V
Tc = 25°C
4.5 A
Tc = 25°C, pulse width limited by TJM
27 A
Tc = 25°C
4.5 A
Tc = 25°C
- mJ
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
IS = 0
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
3.5 V/ns
>200 V/ns
80 W GATE
3.5 W
DRAIN
-55…+150
150
°C
°C
SG1 SG2
SD1 SD2
1.6mm (0.063 in) from case for 10 s
-55…+150
300
2
°C
°C
g
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2 3 4V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
25 µA
250 µA
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
1.5
VDS = 15 V, ID = 0.5ID25, pulse test
2.7 4.0
S
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density



No Preview Available !

501N04A pdf
Directed Energy, Inc.
An IXYS Company
DE150-501N04A
RF Power MOSFET
Symbol Test Conditions
RG
Ciss
Coss
Crss
www.DataSheet4U.coTmd(on)
Ton
Td(off)
Toff
Qg(on)
Qgs
Qgd
RthJHS
VGS = 0 V, VDS = 0.8 VDSS(max),
f = 1 MHz
VGS = 15 V, VDS = 0.8 VDSS
ID = 0.5 IDM
RG = 0.2 (External)
VGS = 10 V, VDS = 0.5 VDSS
ID = 0.5 ID25
Characteristic Values
(TJ = 25°C unless otherwise specified)
min.
typ. max.
5
600 pF
50 pF
5 pF
4 ns
4 ns
4 ns
4 ns
16 40 nC
2.0 6.0 nC
8.0 20 nC
1.5 K/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions
min.
typ. max.
IS
ISM
VSD
VGS = 0 V
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle 2%
4.5 A
27 A
1.4 V
Trr 900 ns
Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.
DEI MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045



Part Number 501N04A
Description RF Power MOSFET
Maker Directed Energy - Directed Energy
Total Page 3 Pages
PDF Download
501N04A pdf
Download PDF File
501N04A pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
501N04A RF Power MOSFET 501N04A
Directed Energy
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components