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Naina Semiconductor
Naina Semiconductor


40HFR10M

SILICON POWER DIODES


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40HFR10M pdf
40HF/40HFR
SILICON POWER DIODES
NAINA
DO-5
FEATURES
• All Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
* Available in metric and UNF thread
ELECTRICAL SPECIFICATIONS
IF(AV) Maximum Average Forward
Current Te=1400C
VFM Maximum peak forward
voltage drop @ Rated IF(AV)
IFRM
Maximum peak one cycle
(non-rep) surge current 10 m sec
IFRM
Maximum peak repetitive
surge current
I2tMaximum I2t rating (non-rep.)
for 5 to 10 m sec
40A
1.2V
500 A
200 A
1200A2Sec
THERMAL MECHANICAL SPECIFICATIONS
40 HF/ HFR
POLARITY
AC
7
Ø 4.0
NormCal ReveArse
17 A/F
M8 x 1.25
27
12
11.5
Ø 8.0
16
POLARITY
AC
NormCal ReveArse
17 A/F
32
12
11.5
M 8 x 1.25
θJC
Tj
Tstg
W
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Maximum thermal resistance Junction to case
Operating Junction Temp.
Storage temperature
Mounting torque
(Non-lubricated threads)
Approx, weight
ELECTRICAL RATINGS
10C/W
-650C to 1500C
-650C to 2000C
0.4 M-kg min,
0.6 M-kg max
13.5 & 30 gms.
TYPE
VRRM
VR(RMS)
40HF/HFR
Max. repetitive peak reverse
voltage (v)
10
100
Max. R.M.S. reverse voltage (V) 70
20 40 60
200 400 600
140 280 420
80 100
800 1000
120 140 160
1200 1400 1600
560 700 840 980 1120
VR Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600
Recommended R.M.S. working 40 80 160 240 320 400
Voltage(v)
480 560 640
IR(AV)
Max. Average reverse leakage 200 200 200 200 200 200
200 200 200
current @ VRMM Tc 250C uA
NAINA SEMICONDUCTOR LTD
D95,SECTOR 63,NOIDA(INDIA)
e-mail: sales@nainasemi.com, web site :www.nainasemi.com



Part Number 40HFR10M
Description SILICON POWER DIODES
Maker Naina Semiconductor - Naina Semiconductor
Total Page 1 Pages
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