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nELL
nELL


40FDR

Fast Recovery Diodes



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40FDR pdf
SEMICONDUCTOR
40FD(R)Series RRooHHSS
Nell High Power Products
Fast Recovery Diodes
(Stud Version), 40A
FEATURES
Short reverse recovery time
Low stored charge
Wide current range
Excellent surge capabilities
Stud cathode and stud anode versions
Voltage up to 1200 VRRM
Compliant to RoHS
TYPICAL APPLICATIONS
DC power supplies
lnverters
Converters
Choppers
Ultrasonic systems
Freewheeling diodes
PRODUCT SUMMARY
IF(AV)
40A
DO-203AB(DO-5)
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
IFSM
I2t
I2t
VRRM
trr
TJ
Maximum TC
50 HZ
60 HZ
50 HZ
60 HZ
Range
Range
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
VOLTAGE
NUMBER CODE
40FD(R)
02
04
06
08
VRRM, MAXIMUM
PEAK REPETITIVE
REVERSE VOLTAGE
TJ = -40°C TO 125°C
V
200
400
600
800
10 1000
12 1200
40FD(R)
40
85
475
500
1128
1038
11281
200 to 1200
See Recovery Characteristics table
-40 to 125
UNIT
A
ºC
A
A2s
I2s
V
ns
ºC
VRSM, MAXIMUM PEAK
NON-REPETITIVE
REVERSE VOLTAGE
TJ = 25°C TO 125°C
V
300
500
700
900
1100
1300
IFM, MAXIMUM PEAK REVERSE
CURRENT AT RATED VRRM
mA
TJ = 25°C
TJ = 125°C
0.1 10
www.nellsemi.com
Page 1 of 6



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40FDR pdf
SEMICONDUCTOR
40FD(R)Series RRooHHSS
Nell High Power Products
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at maximum case temperature
Maximum RMS forward current
Maximum peak repetitive forward current
Maximum peak, one-cycle
non-reptitive surge current
Maximum l²t for fusing
SYMBOL
TEST CONDITIONS
IF(AV) 180° conduction, half sine wave
IF(RMS)
IFRM
IFSM
I2t
Sinusoidal half wave, 30° conduction
t = 10ms Sinusoidal half wave, 100% VRRM
t = 8.3ms reapplied, initial TJ =TJ maximum
t = 10ms Sinusoidal half wave, no voltage
t = 8.3ms reapplied, initial TJ =TJ maximum
t = 10ms 100% VRRM reapplied,
t = 8.3ms initial TJ =TJ maximum
t = 10ms no voltage reapplied,
t = 8.3ms initial TJ =TJ maximum
Maximum l²t for fusing(1)
I2t t = 0.1 ms to 10 ms, no voltage reapplied
Maximum value of threshold voltage
Maximum value of forward slope resistance
Maximum forward voltage drop
VF(TO)
rF
VFM
TJ = 125°C
TJ = 25°C; lFM = 125A
Note : (1) l2t for time tx =I2t tx
40FD(R)
40
85
63
220
400
420
475
500
800
732
1128
1038
11281
1.081
6.33
1.95
UNIT
A
ºC
A
A
A
A2s
A2s
V
mΩ
V
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
Typical reverse recovery time
trr
Typical reverse recovered charge
Qrr
TJ = 25°C, IF = 0.5A, IR = 1.0A,
IRR = 250mA (RG#1 CKT)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
TJ = 25°C, IF = 1A to VR = 30V,
-dlF/dt = 100 A/µs
TJ = 25°C, -dlF/dt = 25 A/µs,
lFM = π x rated lF(AV)
40FD(R)
02 to 06 08 to 12
200 500
UNIT
70 180
ns
200 500
160 750
240 1300
nC
www.nellsemi.com
Page 2 of 6



Part Number 40FDR
Description Fast Recovery Diodes
Maker nELL - nELL
Total Page 6 Pages
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