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Panasonic Electronic Components Datasheet


2SB0936

Power Transistors


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2SB0936 pdf
Power Transistors
2SB0936 (2SB936), 2SB0936A (2SB936A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For low-voltage switching
Features
Low collector-emitter saturation voltage VCE(sat)
High-speed switching
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0936 VCBO
2SB0936A
40
50
Collector-emitter voltage 2SB0936 VCEO
(Base open)
2SB0936A
20
40
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
10
20
40
1.3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0936 VCEO
2SB0936A
IC = −10 mA, IB = 0
20
40
V
Collector-base cutoff
current (Emitter open)
2SB0936 ICBO
2SB0936A
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
IEBO
hFE1 *
Base-emitter voltage
hFE2
VBE(sat)
Collector-emitter saturation voltage
VCE(sat)
Transition frequency
Collector output capacitance
fT
Cob
(Common base, input open circuited)
VCB = 40 V, IE = 0
VCB = 50 V, IE = 0
VEB = 5 V, IC = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −3 A
IC = 10 A, IB = 0.33 A
IC = −10 A, IB = − 0.33 A
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
90
50 µA
50
50 µA
260
1.5 V
0.6 V
100 MHz
400 pF
Turn-on time
Storage time
Fall time
ton IC = −3 A,
tstg IB1 = − 0.1 A, IB2 = 0.1 A
tf VCC = −20 V
0.1 µs
0.5 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
90 to 180
130 to 260
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00017BED
1



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2SB0936 pdf
2SB0936, 2SB0936A
50
(1)
40
30
PC Ta
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
12
IB=–100mA
TC=25˚C
10 –80mA
–60mA
–50mA
8
–40mA
6 –35mA
–30mA
–25mA
4 –20mA
–15mA
2 –10mA
–5mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
10
IC/IB=30
1
0.1
TC=100˚C
25˚C
–25˚C
0.01
0.1
1 10
Collector current IC (A)
VBE(sat) IC
10 IC/IB=30
1
0.1
TC=–25˚C
100˚C
25˚C
hFE IC
104
VCE=–2V
103
TC=100˚C
102
–25˚C
25˚C
10
fT IC
104
VCE=–10V
f=10MHz
TC=25˚C
103
102
10
0.01
0.1
1 10
Collector current IC (A)
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
1
0.1
1
10 100
Collector current IC (A)
1
–0.01
–0.1 –1
Collector current IC (A)
–10
ton, tstg, tf IC
10
Pulsed tw=1ms
Duty cycle=1%
IC/IB=30
(–IB1=IB2)
VCC=–20V
TC=25˚C
1
tstg
ton
0.1
tf
Safe operation area
100
ICP
10
IC
Non repetitive pulse
TC=25˚C
t=10ms
t=1ms
t=300ms
1
0.1
1
0.1
1
10 100
Collector-base voltage VCB (V)
0.01
0
2 4 6
Collector current IC (A)
8
0.01
0.1
1
10 100
Collector-emitter voltage VCE (V)
2 SJD00017BED



Part Number 2SB0936
Description Power Transistors
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 4 Pages
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