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Panasonic Electronic Components Datasheet


2SB0933

Power Transistors



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2SB0933 pdf
Power Transistors
2SB0933 (2SB933)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power switching
Complementary to 2SD1256
8.5±0.2
6.0±0.2
Unit : mm
3.4±0.3
1.0±0.1
Features
Low collector-emitter saturation voltage VCE(sat)
Satisfactory linearity of forward current transfer ratio hFE
Large collector current IC
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
130
80
7
5
10
40
1.3
150
55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0
10 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0
50 µA
Forward current transfer ratio
hFE1 VCE = −2 V, IC = − 0.1 A
45
hFE2 * VCE = −2 V, IC = −2 A
90 260
Base-emitter voltage
VBE(sat) IC = −4 A, IB = − 0.2 A
1.5 V
Collector-emitter saturation voltage
VCE(sat) IC = −4 A, IB = − 0.2 A
0.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −2 A,
0.13 µs
Storage time
tstg IB1 = − 0.2 A, IB2 = 0.2 A
0.5 µs
Fall time
tf VCC = −50 V
0.13 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2
90 to 180
130 to 260
Publication date: April 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00015BED
1



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2SB0933 pdf
2SB0933
50
40
(1)
30
PC Ta
(1)TC=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
8
TC=25˚C
IB=–120mA
–100mA
6 –80mA
–60mA
4 –40mA
–30mA
–20mA
2
–10mA
–3mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
100
10
VCE(sat) IC
IC/IB=20
1
0.1
25˚C
TC=100˚C
–25˚C
0.01
0.01
0.1
1
Collector current IC (A)
10
100
10
1
0.1
VBE(sat) IC
IC/IB=20
25˚C
TC=–25˚C
100˚C
hFE IC
104
VCE=–2V
103
TC=100˚C
25˚C
102
–25˚C
10
fT IC
104
VCE=–10V
f=10MHz
TC=25˚C
103
102
10
0.01
0.01
0.1
1
Collector current IC (A)
10
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
1
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
ton, tstg, tf IC
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=10
(–IB1=IB2)
10
VCC=–50V
TC=25˚C
1
tstg
ton
0.1 tf
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
t=10ms
1
t=300ms
t=0.5ms
t=1ms
0.1
1
0.1
1
10 100
Collector-base voltage VCB (V)
0.01
0
0.8 1.6 2.4 3.2
Collector current IC (A)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
2 SJD00015BED



Part Number 2SB0933
Description Power Transistors
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 4 Pages
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