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Panasonic Electronic Components Datasheet


2SB0930

Power Transistors



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2SB0930 pdf
Power Transistors
2SB0930 (2SB930), 2SB0930A (2SB930A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power amplification
Complementary to 2SD1253, 2SD1253A
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0930 VCBO
2SB0930A
60
80
Collector-emitter voltage 2SB0930 VCEO
(Base open)
2SB0930A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
4
8
40
1.3
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0930 VCEO
2SB0930A
IC = −30 mA, IB = 0
60
80
V
Collector-emitter cutoff 2SB0930 ICES VCE = 60 V, VBE = 0
400 µA
current (E-B short)
2SB0930A
VCE = 80 V, VBE = 0
400
Collector-emitter cutoff 2SB0930 ICEO VCE = 30 V, IB = 0
700 µA
current (Base open)
2SB0930A
VCE = 60 V, IB = 0
700
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
1 mA
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
70 250
hFE2 VCE = −4 V, IC = −3 A
15
Base-emitter voltage
VBE VCE = 4 V, IC = 3 A
2.0 V
Collector-emitter saturation voltage
VCE(sat) IC = −4 A, IB = −0.4 A
1.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
20
MHz
Turn-on time
ton IC = −4 A,
0.2 µs
Storage time
tstg IB1 = − 0.4 A, IB2 = 0.4 A
0.5 µs
Fall time
tf VCC = −50 V
0.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00012BED
1



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2SB0930 pdf
2SB0930, 2SB0930A
50
40
(1)
30
PC Ta
(1)TC = Ta
(2)With a 50 mm × 50 mm
× 2 mm Al heat sink
(3)Without heat sink
(PC = 1.3 W)
20
10
(2)
(3)
0
0
40
80 120 160
Ambient temperature Ta (°C)
IC VCE
6
IB = −120 mA TC = 25°C
5 100 mA
80 mA
4
60 mA
3 40 mA
20 mA
2
10 mA
8 mA
1
5 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
10
VCE = −4 V
8
25°C
6 TC = 100°C 25°C
4
2
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
25°C
TC = 100°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
104 VCE = −4 V
103
TC = 100°C
25°C
102 25°C
10
1
0.01
0.1
1
Collector current IC (A)
10
fT IC
104
VCE = −5 V
f = 1 MHz
TC = 25°C
103
102
10
1
0.01
0.1
1
Collector current IC (A)
10
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
IC
t = 10 ms
1
t = 300 ms
0.1
t = 1 ms
103
102
10
1
101
Rth t
(1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
(1)
(2)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
102
104
103
102
101
1
10 102 103 104
Time t (s)
2 SJD00012BED



Part Number 2SB0930
Description Power Transistors
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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