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Panasonic Electronic Components Datasheet


2SB0929

Power Transistors


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2SB0929 pdf
Power Transistors
2SB0929 (2SB929), 2SB0929A (2SB929A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For power amplification
Complementary to 2SD1252, 2SD1252A
Features
High forward current transfer ratio hFE which has satisfactory linearity
Low collector-emitter saturation voltage VCE(sat)
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB0929 VCBO
2SB0929A
60
80
Collector-emitter voltage 2SB0929 VCEO
(Base open)
2SB0929A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
VEBO
IC
ICP
5
3
5
Collector power dissipation
Ta = 25°C
PC
35
1.3
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0)
1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB0929 VCEO
2SB0929A
IC = −30 mA, IB = 0
60
80
V
Collector-emitter cutoff 2SB0929 ICES VCE = 60 V, VBE = 0
200 µA
current (E-B short)
2SB0929A
VCE = 80 V, VBE = 0
200
Collector-emitter cutoff 2SB0929 ICEO VCE = 30 V, IB = 0
300 µA
current (Base open)
2SB0929A
VCE = 60 V, IB = 0
300
Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0
1 mA
Forward current transfer ratio
hFE1 * VCE = −4 V, IC = −1 A
70 250
hFE2 VCE = −4 V, IC = −3 A
10
Base-emitter voltage
VBE VCE = 4 V, IC = 3 A
1.8 V
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = −0.375 A
1.2 V
Transition frequency
fT VCE = −10 V, IC = − 0.5 A, f = 10 MHz
30
MHz
Turn-on time
ton IC = −1 A,
0.5 µs
Strage time
tstg IB1 = − 0.1 A, IB2 = 0.1 A
1.2 µs
Fall time
tf VCC = −50 V
0.3 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJD00011BED
1



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2SB0929 pdf
2SB0929, 2SB0929A
PC Ta
40 (1)TC = Ta
(2)With a 50 × 50 × 2 mm3
Al heat sink
(3)Without heat sink
30 (PC = 1.3 W)
20
(1)
10
(2)
(3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
6
TC = 25°C
5
IB = −100 mA
4 80 mA
60 mA
3 40 mA
30 mA
2 20 mA
12 mA
1
8 mA
16 mA
4 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
10
VCE = −4 V
8
6
25°C
TC = 100°C 25°C
4
2
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
TC = 100°C
25°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
104 VCE = −4 V
103
TC = 100°C
25°C
102
25°C
10
1
0.01
0.1
1
Collector current IC (A)
10
fT IC
104
VCE = −5 V
f = 10 MHz
TC = 25°C
103
102
10
1
0.01
0.1
1
Collector current IC (A)
10
Safe operation area
10
ICP
IC
t =10 ms
1
Non repetitive
pulse
TC = 25°C
t = 1 ms
t = 300 ms
0.1
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
Rth t
103 (1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
102 (1)
(2)
10
1
101
102
104
103
102
101
1
10
Time t (s)
102 103
104
2 SJD00011BED



Part Number 2SB0929
Description Power Transistors
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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