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Panasonic Electronic Components Datasheet


2SB0928A

Power Transistors



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2SB0928A pdf
Power Transistors
2SB0928 (2SB928), 2SB0928A (2SB928A)
wwwS.DaitlaiScheoetn4U.nPetNP epitaxial planar type
For Power amplification
For TV vertical deflection output
Complementary to 2SD1250 and 2SD1250A
8.5±0.2
6.0±0.2
Unit : mm
3.4±0.3
1.0±0.1
Features
High collector-emitter voltage (Base open) VCEO
High collector power dissipation PC
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment.
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
5.08±0.5
123
(8.5)
(6.0)
1.3
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0928
(Base open)
2SB0928A
VCBO
VCEO
200
150
180
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Ta = 25°C
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
6
2
3
30
1.3
150
55 ∼ +150
Unit
V
V
V
A
A
W
°C
°C
(6.5)
1 : Base
2 : Collector
3 : Emitter
N-G1 Package
Note) Self-supported type package is also prepared
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SB0928
(Base open)
2SB0928A
VCBO
VCEO
IC = −500 µA, IE = 0
IC = −5 mA, IB = 0
200
150
180
V
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
VEBO
ICBO
IEBO
hFE1 *
hFE2
VBE
VCE(sat)
fT
IE = −500 µA, IC = 0
VCB = −200 V, IE = 0
VEB = −4 V, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −10 V, IC = −400 mA
VCE = −10 V, IC = −400 mA
IC = −500 mA, IB = −50 mA
VCE = −10 V, IC = − 0.5 A, f = 10 MHz
6
60
50
V
50 µA
50 µA
240
1.0 V
1.0 V
40 MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
60 to 140
100 to 240
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2003
SJD00010BED
1



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2SB0928A pdf
2SB0928, 2SB0928A
40
(1)
30
PC Ta
(1)TC = Ta
(2)With a 50 mm × 50 mm × 2 mm
Al heat sink
(3)Without heat sink
(PC = 1.3 W)
20
10
(2)
(3)
0
0 40 80 120 160
Ambient temperature Ta (°C)
600
500
400
300
200
100
IC VCE
TC = 25°C
IB = −4.5 mA
4.0 mA
3.5 mA
3.0 mA
2.5 mA
2.0 mA
1.5 mA
1.0 mA
0.5 mA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC VBE
–2.0
VCE = −10 V
–1.6
25°C
TC = 100°C
–1.2
– 0.8
– 0.4
25°C
0
0 – 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
VCE(sat) IC
hFE IC
fT IC
IC / IB = 10
104
VCE = −10 V
104
VCE = −10 V
10 f = 10 MHz
TC = 25°C
103 103
1
0.1
TC = 100°C
25°C
25°C
TC = 100°C
25°C
102
25°C
10
102
10
0.01
0.01
0.1
1
Collector current IC (A)
1
0.01
0.1
1
Collector current IC (A)
10
1
0.01
0.1
1
Collector current IC (A)
10
Safe operation area
–10
ICP
Non repetitive pulse
TC = 25°C
t = 0.5 ms
IC
–1 t = 5 ms
t = 1 ms
– 0.1
t = 300 ms
– 0.01
–1
–10
–100
–1 000
Collector-emitter voltage VCE (V)
Rth t
103 (1)Without heat sink
(2)With a 50 mm × 50 mm × 2 mm Al heat sink
102 (1)
(2)
10
1
101
102
104
103
102
101
1
10
Time t (s)
102 103
104
2 SJD00010BED



Part Number 2SB0928A
Description Power Transistors
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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