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Panasonic Electronic Components Datasheet


2SB0766A

Silicon PNP epitaxial planer type(For low-frequency output amplification)



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2SB0766A pdf
Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD874 and 2SD874A
s Features
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
4.5±0.1
1.6±0.2
45°
Unit: mm
1.5±0.1
Parameter
Symbol
Ratings
Unit
Collector to 2SB766
base voltage 2SB766A
VCBO
–30
–60
V
Collector to 2SB766
emitter voltage 2SB766A
VCEO
–25
–50
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1.5 A
Collector current
IC
–1 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : A(2SB766)
B(2SB766A)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to base 2SB766
voltage
2SB766A
Collector to emitter 2SB766
voltage
2SB766A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA*2
VCE = –5V, IC = –1A*2
IC = –500mA, IB = –50mA*2
IC = –500mA, IB = –50mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
QR S
hFE1
Marking 2SB766
Symbol
2SB766A
85 ~ 170
AQ
BQ
120 ~ 240
AR
BR
170 ~ 340
AS
BS
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 340
50
– 0.2 – 0.4
V
– 0.85 –1.2
V
200 MHz
20 30 pF
*2 Pulse measurement
1



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2SB0766A pdf
Transistor
PC — Ta
1.4
Printed circut board: Copper
foil area of 1cm2 or more, and
1.2 the board thickness of 1.7mm
for the collector portion.
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
25˚C
–1
– 0.3
– 0.1
Ta=–25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–1.50
–1.25
–1.00
– 0.75
– 0.50
– 0.25
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
hFE — IC
600
VCE=–10V
500
400
Ta=75˚C
300
25˚C
200
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Area of safe operation (ASO)
–10
–3
ICP
–1
IC
– 0.3
– 0.1
Single pulse
Ta=25˚C
t=10ms
t=1s
– 0.03
– 0.01
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10
Collector to emitter voltage VCE (V)
2SB766, 2SB766A
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1
3
10 30
100
Emitter current IE (mA)
2



Part Number 2SB0766A
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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