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Panasonic Electronic Components Datasheet


2SB0710A

Silicon PNP epitaxial planer type



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2SB0710A pdf
Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0602 and 2SD0602A
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
I Features
Large collector current IC
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to
base voltage
2SB0710
2SB0710A
VCBO
30
60
Collector to
2SB0710
emitter voltage 2SB0710A
VCEO
25
50
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
ICP
IC
PC
Tj
Tstg
5
1
500
200
150
55 to +150
Unit
V
V
V
A
mA
mW
°C
°C
10°
1: Base
2: Emitter
3: Collector
Marking Symbol
2SB0710 : C
2SB0710A : D
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector cutoff current
Collector to
base voltage
2SB0710
2SB0710A
ICBO
VCBO
VCB = −20 V, IE = 0
IC = −10 µA, IE = 0
0.1
30
60
Collector to
emitter voltage
2SB0710
2SB0710A
VCEO
IC = −10 mA, IB = 0
25
50
Emitter to base voltage
Forward current transfer ratio *1
Collector to emitter saturation voltage *1
Base to emitter saturation voltage *1
Transition frequency
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
VEBO
IE = −10 µA, IC = 0
5
hFE1 *2 VCE = −10 V, IC = −150 mA
85 340
hFE2 VCE = −10 V, IC = −500 mA
40
VCE(sat) IC = −300 mA, IB = −30 mA
0.35 0.6
VBE(sat) IC = −300 mA, IB = −30 mA
1.1 1.5
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
Cob VCB = −10 V, IE = 0, f = 1 MHz
6 15
Unit
µA
V
V
V
V
V
MHz
pF
Rank
hFE1
Marking 2SB0710
symbol 2SB0710A
Q
85 to 170
CQ
DQ
R
120 to 240
CR
DR
S
170 to 340
CS
DS
No-rank
85 to 340
C
D
Product of no-rank is not classi-
fied and have no indication for
rank.
1



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2SB0710A pdf
2SB0710, 2SB0710A
Transistors
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
1 200
1 000
IC VCE
Ta = 25°C
800
600
400
200
IB = 10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
800
700
600
500
400
300
200
100
0
0
IC IB
VCE = −10 V
Ta = 25°C
2 4 6 8
Base current IB (mA)
10
VCE(sat) IC
10 IC / IB = 10
3
1
0.3
0.1
0.03
0.01
Ta=75°C
25°C
25°C
0.003
0.001
1
3 10 30 100 300 1 000
Collector current IC (mA)
100
30
10
VBE(sat) IC
IC / IB = 10
3
1
0.3
0.1
25°C
Ta = −25°C
75°C
0.03
0.01
1
3 10 30 100 300 1 000
Collector current IC (mA)
hFE IC
600
VCE = −10 V
500
400
300
Ta = 75°C
200 25°C
25°C
100
0
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
fT IE
240
VCB = −10 V
Ta = 25°C
200
160
120
80
40
0
1 2 3 5 10 20 30 50 100
Emitter current IE (mA)
Cob VCB
24
IE = 0
f = 1 MHz
20 Ta = 25°C
16
12
8
4
0
1 2 3 5 10 2030 50 100
Collector to base voltage VCB (V)
VCER RBE
120
100
IC = −2 mA
Ta = 25°C
80
60
2SB0710A
40
2SB0710
20
0
1 3 10 30 100 300 1 000
Base to emitter resistance RBE (k)
2



Part Number 2SB0710A
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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