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Panasonic Electronic Components Datasheet


2SB0709A

Silicon PNP epitaxial planar type


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2SB0709A pdf
Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
Features
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
200
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: B
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
45
7
160
0.3
80
2.7
0.1
100
460
0.5
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S No-rank
hFE 160 to 260
Marking symbol
BQ
210 to 340
BR
290 to 460
BS
160 to 460
B
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: March 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00047BED
1



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2SB0709A pdf
2SB0709A
PC Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
120
Ta = 25°C
100
80
IB = −300 µA
60 250 µA
200 µA
40 150 µA
100 µA
20
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
60
VCE = −5 V
Ta = 25°C
50
40
30
20
10
0
0 100 200 300 400
Base current IB (µA)
400
350
IB VBE
VCE = −5 V
Ta = 25°C
300
250
200
150
100
50
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
240
200
160
IC VBE
VCE = −5 V
25°C
Ta = 75°C 25°C
120
80
40
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
10
1
0.1
0.01
VCE(sat) IC
IC / IB = 10
Ta = 75°C
25°C
25°C
0.001
1
10
100
1 000
Collector current IC (mA)
hFE IC
600
VCE = −10 V
500
400
Ta = 75°C
300 25°C
25°C
200
100
0
1
10
100
1 000
Collector current IC (mA)
fT IE
160
VCB = −10 V
Ta = 25°C
140
120
100
80
60
40
20
0
0.1 1 10 100
Emitter current IE (mA)
Cob VCB
8
IE = 0
f = 1 MHz
7 Ta = 25°C
6
5
4
3
2
1
0
1 10 100
Collector-base voltage VCB (V)
2 SJC00047BED



Part Number 2SB0709A
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 4 Pages
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