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Panasonic Electronic Components Datasheet


2SA921

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)



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2SA921 pdf
Transistor
2SA921
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SC1980
s Features
q High collector to emitter voltage VCEO.
q Low noise voltage NV.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–120
–120
–5
–50
–20
250
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = –50V, IE = 0
–100 nA
VCE = –50V, IB = 0
–1 µA
IC = –10µA, IE = 0
–120
V
IC = –1mA, IB = 0
–120
V
IE = –10µA, IC = 0
–5
V
VCE = –5V, IC = –2mA
180 520
IC = –20mA, IB = –2mA
– 0.6
V
VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
VCE = –40V, IC = –1mA, GV = 80dB
Rg = 100k, Function FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
1



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2SA921 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 40 80 120 160 200
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C Ta=75˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–24
Ta=25˚C
–20 IB=–50µA
–45µA
–40µA
–16 –35µA
–30µA
–12 –25µA
–20µA
–8 –15µA
–10µA
–4
–5µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
hFE — IC
1000
900
VCE=–5V
800
700
600
500 Ta=75˚C
25˚C
400
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
NV — IC
120
VCE=–10V
GV=80dB
Function=FLAT
100
Rg=100k
80
60
22k
40
4.7k
20
0
– 0.01 – 0.03
– 0.1
– 0.3
–1
Collector current IC (mA)
2SA921
IC — VBE
–60
VCE=–5V
–50 25˚C
Ta=75˚C –25˚C
–40
–30
–20
–10
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
320
VCB=–5V
Ta=25˚C
280
240
200
160
120
80
40
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2



Part Number 2SA921
Description Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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