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Panasonic Electronic Components Datasheet


2SA794

Silicon PNP epitaxial planar type



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2SA794 pdf
Power Transistors
2SA0794 (2SA794), 2SA0794A (2SA794A)
Silicon PNP epitaxial planar type
For low-frequency output driver
Complementary to 2SC1567, 2SC1567A
Features
High collector-emitter voltage (Base open) VCEO
Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SA0794 VCBO
2SA0794A
100
120
Collector-emitter voltage 2SA0794 VCEO
(Base open)
2SA0794A
100
120
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
0.5
1
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector-emitter voltage
(Base open)
2SA0794 VCEO
2SA0794A
IC = −100 µA, IB = 0
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = −1 µA, IC = 0
VCE = −10 V, IC = −150 mA
VCE = −5 V, IC = −500 mA
IC = −500 mA, IB = −50 mA
IC = −500 mA, IB = −50 mA
VCB = −10 V, IE = 50 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
100
120
5
90
50
Typ
100
0.2
0.85
120
20
Max
220
0.4
1.20
30
Unit
V
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
90 to 155
130 to 220
Publication date: February 2003
Note) The part numbers in the parenthesis show conventional part number.
SJD00001BED
1



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2SA794 pdf
2SA0794, 2SA0794A
PC Ta
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
1.2
1.0
0.8
0.6
0.4
IC VCE
TC = 25°C
18 mA IB = −20 mA
16 mA
14 mA
12 mA
10 mA
8 mA
6 mA
4 mA
2 mA
0.2
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
1.2
VCE = −10 V
TC = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14
Base current IB (mA)
IC VBE
0.6
VCE = −10 V
0.5
Ta = 125°C
25°C
0.4
75°C
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.8 1.0
Base-emitter voltage VBE (V)
1
0.1
VCE(sat) IC
IC / IB = 10
TC = 100°C
25°C
25°C
0.01
0.01
0.1
Collector current IC (A)
1
VBE(sat) IC
IC / IB = 10
1 TC = −25°C
25°C
100°C
0.1
0.01
0.01
0.1
Collector current IC (A)
1
1 000
100
hFE IC
VCE = −10 V
TC = 100°C
25°C
25°C
10
0.01
0.1
Collector current IC (A)
1
fT IE
200
VCB = −10 V
f = 200 MHz
TC = 25°C
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
TC = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
2 SJD00001BED



Part Number 2SA794
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 4 Pages
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