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Panasonic Electronic Components Datasheet


2SA720A

Silicon NPN epitaxial planer type(For low-frequency driver amplification)


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2SA720A pdf
Transistor
2SA720A
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC1318A
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–80
–70
–5
–1
– 0.5
625
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
VCB = –10V, IE = 50mA, f = 100MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
min typ max Unit
– 0.1 µA
–80 V
–70 V
–5 V
85 240
40
– 0.2 – 0.6
V
– 0.85 –1.5
V
120 MHz
20 30 pF
*2 Pulse measurement
1



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2SA720A pdf
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA720A
IC — IB
–1.2
–1.0
VCE=–10V
Ta=25˚C
– 0.8
– 0.6
– 0.4
– 0.2
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
–25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
–1
–3 –10 –30 –100 –300 –1000
Collector current IC (A)
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
300
VCE=–10V
250
200 Ta=75˚C
25˚C
150
–25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
ICBO — Ta
104
VCB=–20V
103
102
10
1
0 60 120 180
Ambient temperature Ta (˚C)
2



Part Number 2SA720A
Description Silicon NPN epitaxial planer type(For low-frequency driver amplification)
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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