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Panasonic Electronic Components Datasheet


2SA720

Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification)



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2SA720 pdf
Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
s Features
q Complementary pair with 2SC1317 and 2SC1318.
5.0±0.2
Unit: mm
4.0±0.2
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SA719
base voltage 2SA720
Collector to 2SA719
emitter voltage 2SA720
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1
–500
625
150
–55 ~ +150
Unit
V
V
V
A
mA
mW
˚C
˚C
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
2SA719
voltage
2SA720
Collector to emitter 2SA719
voltage
2SA720
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 340
40
– 0.35 – 0.6
V
–1.1 –1.5
V
200 MHz
6 15 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1



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2SA720 pdf
Transistor
PC — Ta
800
700
600
500
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
12
Ta=25˚C
10
8
IB=–1.0mA
– 0.9mA
– 0.8mA
6 – 0.7mA
– 0.6mA
– 0.5mA
4 – 0.4mA
– 0.3mA
– 0.2mA
2
– 0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SA719, 2SA720
–800
–700
IC — IB
VCE=–10V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
–25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
240
VCB=–10V
Ta=25˚C
200
160
120
80
40
0
1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
hFE — IC
600
VCE=–10V
500
400
300
Ta=75˚C
200 25˚C
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–120
–100
VCER — RBE
IC=–2mA
Ta=25˚C
–80
–60
2SA720
–40
2SA719
–20
0
1 3 10 30 100 300 1000
Base to emitter resistance RBE (k)
2



Part Number 2SA720
Description Silicon PNP epitaxial planer type(For low-frequency power amplification and driver amplification)
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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