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Panasonic Electronic Components Datasheet


2SA2164

Silicon PNP epitaxial planar type For high-frequency amplification


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Transistors
2SA2164
Silicon PNP epitaxial planar type
For high-frequency amplification
Features
High transfer ratio fT
SSS-Mini type package, allowing downsizing of the equipment and 
automatic insertion through the tape packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
30
20
5
30
100
125
55 to +125
Unit
V
V
V
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
Unit: mm
0.10+–00..0025
1: Base
2: Emitter
3: Collector
Marking Symbol : E
SSSMini3-F1 Package
Electrical Characteristics Ta = 25°C±3°C
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Parameter
Symbol
Conditions
Min Typ
Base-emitter voltage
VBE VCE = –10 V, IC = –1 mA
0.7
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Collector-emitter cut-off current (Base open)
ICEO VCE = –20 V, IB = 0
Emitter-base cut-off current (Collector open)
IEBO VEB = –5 V, IC = 0
Forward current transfer ratio
hFE VCB = –10 V, IE = 1 mA
70
Collector-emitter saturation voltage
VCE(sat) IC = –10 mA, IB = –1 mA
0.1
Transition frequency
fT VCB = –10 V, IE = 1 mA, f = 200 MHz 150 300
Noise figure
NF VCB = –10 V, IE = 1 mA, f = 5 MHz
2.8
Reverse transfer impedance
Zrb VCB = –10 V, IE = 1 mA, f = 2 MHz
22
Common-emitter reverse transfer capacitance Cre VCB = –10 V, IE = 1 mA, f = 10.7 MHz
1.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
10
220
Unit
V
µA
µA
µA
V
MHz
dB
pF
DataShee
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Publication date : December 2004
DataSheet4 U .com
SJC00330AED
1



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2SA2164
120
2SA2164_ PC-Ta
PC Ta
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
2SA2164_ VCE(sat)-IC
VCE(sat) IC
10
IC / IB = 10
et4U.com
1
0.1
Ta = 85°C
25°C
25°C
0.01
0.1
−1
−10 −100
Collector current IC (mA)
2SA2164_ IC-VCE
IC VCE
25
Ta = 25°C
IB = −300 µA
250 µA
20
200 µA
15 150 µA
100 µA
10
50 µA
5
0
0 −2 −4 −6 −8 −10 −12
Collector-emitter voltage VCE (V)
2SA2164_ hFE-IC
hFE IC
160
VCE = −10 V
140 Ta = 85°C
120
25°C
100
25°C
80
60
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40
20
0
−0.1 −1 −10 −100
Collector current IC (mA)
2SA2164_ IC-VBE
IC VBE
30
VCE = −10 V
25
Ta = 85°C
20
25°C
15
25°C
10
5
0
0.3 0.4 0.5 − 0.6 − 0.7 − 0.8 − 0.9 −1
Base-emitter voltage VBE (V)
2SA2164_ Cob-VCB
Cob VCB
10 f = 1 MHz
Ta = 25°C
1
DataShee
0.1
0 5 10 15 20 25 30
Collector-base voltage VCB (V)
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2
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SJC00330AED



Part Number 2SA2164
Description Silicon PNP epitaxial planar type For high-frequency amplification
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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