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Panasonic Electronic Components Datasheet


2SA2162

Silicon PNP epitaxial planar type



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Transistors
2SA2162
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6036
Features
Low collector-emitter saturation voltage VCE(sat)
SSS-Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
15 V
12 V
5 V
500 mA
1 A
100 mW
125 °C
55 to +125 °C
DataSheet4U.com
0.33+−00..0052
3
0.23+−00..0052
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
Unit: mm
0.10+−00..0052
1: Base
2: Emitter
3: Collecter
SSSMini3-F1 Package
Marking Symbol : 2U
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
VCBO IC = –10 µA, IE = 0
15
Collector-emitter voltage (Base open)
VCEO IC = –1 mA, IB = 0
12
Emitter-base voltage (Collector open)
VEBO IE = –10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = –10 V, IE = 0
Forward current transfer ratio
hFE VCE = –2 V, IC = –10 mA
270
Collector-emitter saturation voltage
VCE(sat) IC = –200 mA, IB = –10 mA
Transition frequency
fT VCB = –2 V, IE = 10 mA, f = 200 MHz
200
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, f = 1 MHz
4.5
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
680
250
Unit
V
V
V
µA
mV
MHz
pF
DataShee
DataSheet4U.com
Publication date : December 2004
DataSheet4 U .com
SJC00323AED
1



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2SA2162
2SA2162_ PC-Ta
PC Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
2SA2162_ VCE(sat)-IC
VCE(sat) IC
1
IC / IB = 20
et4U.com
0.1
Ta = 85°C
25°C
25°C
0.01
0.1
−1
−10 −100 −1 000
Collector current IC (mA)
2SA2162_ IC-VCE
IC VCE
70
Ta = 25°C IB = −160 µA
60
50 140 µA
120 µA
40
100 µA
30 80 µA
20 60 µA
40 µA
10
20 µA
0
0 0.5 −1.0 −1.5 −2.0 −2.5 −3.0
Collector-emitter voltage VCE (V)
2SA2162_ hFE-IC
hFE IC
600
500 Ta = 85°C
VCE = −2V
100
90
2SA2162_ IC-VBE
IC VBE
VCE = −2 V
80
70
60
50 Ta = 85°C
40
25°C
30 25°C
20
10
0
0 0.2 0.4 0.6 0.8 −1.0 −1.2 −1.4
Base-emitter voltage VBE (V)
2SA2162_ Cob-VCB
Cob VCB
100 f = 1 MHz
Ta = 25°C
400 25°C
300 25°C
10
200DataSheet4U.com
100
DataShee
0
−1
−10
−100
−1 000
Collector current IC (mA)
1
0 5 10
Collector-base voltage VCB (V)
DataSheet4U.com
2
DataSheet4 U .com
SJC00323AED



Part Number 2SA2162
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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