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Panasonic Electronic Components Datasheet


2SA2140

Silicon PNP epitaxial planar type



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Power Transistors
2SA2140
Silicon PNP epitaxial planar type
For power amplification
For TV VM circuit
Features
Satisfactory linearity of forward current transfer ratio hFE
High transition frequency (fT)
Full-pack package which can be installed to the heat sink with one
screw.
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
180
V
180
V
6 V
1.5 A
3 A
20 W
2.0
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150 °C
55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
DataShee
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
180
V
Collector-base cutoff current (Emitter open) ICBO VCB = −180 V, IE = 0
100 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
100 µA
Forward current transfer ratio *
hFE VCE = 5 V, IC = 0.1 A
60 240
Collector-emitter saturation voltage
VCE(sat) IC = −1 A, IB = − 0.1 A
0.5 V
Transition frequency
fT VCE = −10 V, IC = − 0.2 A, f = 10 MHz
100
MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
30 pF
Turn-on time
Storage time
Fall time
ton IC = − 0.4 A, Resistance loaded
tstg IB1 = 0.04 A, IB2 = − 0.04 A
tf VCC = 100 V
0.1 µs
1.0 µs
0.1 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
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60 to 140
120 to 240
Publication date: July 2004
DataSheet4 U .com
SJD00316AED
1



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2SA2140
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
(1)
20
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
10
Non repetitive pulse, TC = 25°C
ICP
IC
1
0.1
0.01
1
t = 1 ms
t = 10 ms
t=1s
10 100 1 000
Collector-emitter voltage VCE (V)
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SJD00316AED



Part Number 2SA2140
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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