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Panasonic Electronic Components Datasheet


2SA2079

Silicon PNP epitaxial planar type Power Transistors


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2SA2079 pdf
Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
100
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3D
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = –10 µA, IE = 0
IC = –2 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCB = –10 V, IE = 1 mA, f = 200 MHz
VCB = –10 V, IE = 0, f = 1 MHz
45
45
7
180
0.2
80
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
390
0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Publication date : December 2004
SJC00326AED
1



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2SA2079 pdf
2SA2079
120
2SA2162_ PC-Ta
PC Ta
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
2SA2079_IB-VBE
IB VBE
3.5
VCE = −10 V
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
2SA2079_hFE-IC
hFE IC
300
Ta = 75°C
250
VCE = −10 V
25°C
200
25°C
150
100
50
0
1
10
100
1000
Collector current IC (mA)
2SA2079_IC-VCE
IC VCE
60
Ta = 25°C
50 Ta = −300 µA
250 µA
40
200 µA
30
150 µA
20
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
2SA2079_IC-VBE
IC VBE
120
VCE = −10 V
100
Ta = 75°C
25°C
80
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2SA2079_Cob-VCB
Cob VCB
10
f = 1 MHz
Ta = 25°C
1
0 8 16 24 32 40
Collector-base voltage VCB (V)
140
120
2SA2079_IC-IB
IC IB
VCE = −10 V
Ta = 25°C
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
2SA2079_VCE(sat)-IC
VCE(sat) IC
1
IC / IB = 10 V
0.1
Ta = 75°C
25°C
25°C
0.011
10 100
Collector current IC (mA)
2 SJC00326AED



Part Number 2SA2079
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic - Panasonic
Total Page 3 Pages
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