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Panasonic Electronic Components Datasheet


2SA2078

Silicon PNP epitaxial planar type Power Transistors



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2SA2078 pdf
Transistors
2SA2078
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5846
Features
High forward current transfer ratio hFE
SSS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
50
7
100
200
100
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
Unit: mm
0.10+–00..0025
1 : Base
2 : Emitter
3 : Collector
SSSMini3-F1 Package
Marking Symbol: 7H
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Conditions
IC = −10 µA, IE = 0
IC = −100 µA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
Min
60
50
7
180
Typ Max
0.2
80
2.2
0.1
100
390
0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00302AED
1



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2SA2078 pdf
2SA2078
PC Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
60
Ta = 25°C
IC VCE
50 Ta = −300 µA
250 µA
40
200 µA
30
150 µA
20
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
140
VCE = −10 V
Ta = 25°C
120
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
IB VBE
3.5
VCE = −10 V
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
IC VBE
120
VCE = −10 V
100
Ta = 75°C
25°C
80
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
1 IC / IB = 10
0.1
Ta = 75°C
25°C
25°C
0.01
1
10 100
Collector current IC (mA)
hFE IC
300
VCE = −10 V
Ta = 75°C
250
25°C
200
25°C
150
100
50
0
1
10
100
1 000
Collector current IC (mA)
Cob VCB
10 f = 1 MHz
Ta = 25°C
1
0 8 16 24 32 40
Collector-base voltage VCB (V)
2 SJC00302AED



Part Number 2SA2078
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic - Panasonic
Total Page 3 Pages
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