http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Panasonic Electronic Components Datasheet


2SA2077

Silicon PNP epitaxial planar type Transistors



No Preview Available !

2SA2077 pdf
Transistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5845
Features
High forward current transfer ratio hFE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
200
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 7L
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
IE = −10 µA, IC = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VCE = −10 V, IC = −2 mA
IC = −100 mA, IB = −10 mA
VCB = −10 V, IE = 1 mA, f = 200 MHz
VCB = −10 V, IE = 0, f = 1 MHz
45
45
7
160
0.2
80
2.2
0.1
100
460
0.5
V
V
V
µA
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
SJC00301AED
1



No Preview Available !

2SA2077 pdf
2SA2077
PC Ta
250
200
150
100
50
0
0 40 80 120 160
Ambient temperature Ta (°C)
60
Ta = 25°C
IC VCE
50 Ta = −300 µA
250 µA
40
200 µA
30
150 µA
20
100 µA
10
50 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
IC IB
140
VCE = −10 V
Ta = 25°C
120
100
80
60
40
20
0 0 0.2 0.4 0.6 0.8 1.0 1.2
Base current IB (mA)
IB VBE
3.5
VCE = −10 V
Ta = 25°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0 0.2 0.4 0.6 0.8
Base-emitter voltage VBE (V)
IC VBE
120
VCE = −10 V
100
Ta = 75°C
25°C
80
60
25°C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
VCE(sat) IC
1 IC / IB = 10
0.1
Ta = 75°C
25°C
25°C
0.01
1
10 100
Collector current IC (mA)
hFE IC
300
VCE = −10 V
Ta = 75°C
250
25°C
200
25°C
150
100
50
0
1
10
100
1 000
Collector current IC (mA)
Cob VCB
10 f = 1 MHz
Ta = 25°C
1
0 8 16 24 32 40
Collector-base voltage VCB (V)
2 SJC00301AED



Part Number 2SA2077
Description Silicon PNP epitaxial planar type Transistors
Maker Panasonic - Panasonic
Total Page 3 Pages
PDF Download
2SA2077 pdf
Download PDF File
2SA2077 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
2SA2002 Silicon PNP Epitaxial Type 2SA2002
IDC
PDF
2SA2004 Silicon PNP epitaxial planer type 2SA2004
Panasonic Semiconductor
PDF
2SA2005 For Audio Amplifier output - TV Velosity Modulation 2SA2005
Rohm
PDF
2SA2009 Silicon PNP epitaxial planer type 2SA2009
Panasonic Semiconductor
PDF
2SA201 PNP transistor 2SA201
ETC
PDF
2SA2010 Silicon PNP epitaxial planer type 2SA2010
Panasonic Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components