http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Panasonic Electronic Components Datasheet


2SA2075

Silicon PNP epitaxial planar type Power Transistors


No Preview Available !

2SA2075 pdf
Power Transistors
2SA2075
Silicon PNP epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
Features
High-speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
Allowing supply with the radial taping (MT-4)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
TC = 25°C
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
80
6
3
5
15
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Marking Symbol: A2075
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = −10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open) ICBO VCB = −80 V, IE = 0
100 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −80 V, IB = 0
100 µA
Forward current transfer ratio
hFE1 VCE = −4 V, IC = −1 A
80 250
hFE2 VCE = −4 V, IC = −3 A
30
Collector-emitter saturation voltage
VCE(sat) IC = −3 A, IB = −375 mA
1.0 V
Transition frequency
fT VCE = 10 V, IC = − 0.1 A, f = 10 MHz 100 MHz
Turn-on time
ton IC = −1 A, Resistance loaded
0.2 µs
Storage time
tstg IB1 = − 0.1 A, IB2 = 0.1 A
0.7 µs
Fall time
tf VCC = −50 V
0.1 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJD00294AED
1



No Preview Available !

2SA2075 pdf
2SA2075
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
20
(1)
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe operation area
100
Non repetitive pulse
TC = 25˚C
10
ICP
IC
1 10 ms
0.1
t = 1 ms
t=1s
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
1 000 Without heat sink
100
Rth t
Ta = 25°C
10
1
0.1
0.001
0.01
0.1 1 10
Time t (s)
100 1 000
2 SJD00294AED



Part Number 2SA2075
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic - Panasonic
Total Page 3 Pages
PDF Download
2SA2075 pdf
Download PDF File
2SA2075 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
2SA2002 Silicon PNP Epitaxial Type 2SA2002
IDC
PDF
2SA2004 Silicon PNP epitaxial planer type 2SA2004
Panasonic Semiconductor
PDF
2SA2005 For Audio Amplifier output - TV Velosity Modulation 2SA2005
Rohm
PDF
2SA2009 Silicon PNP epitaxial planer type 2SA2009
Panasonic Semiconductor
PDF
2SA201 PNP transistor 2SA201
ETC
PDF
2SA2010 Silicon PNP epitaxial planer type 2SA2010
Panasonic Semiconductor
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components