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Panasonic Electronic Components Datasheet


2SA2064

Silicon PNP epitaxial planar type



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2SA2064 pdf
This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SA2064
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
Features
High speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
50
6
10
20
25
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
hFE1
hFE2
VCE(sat)
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VCE = −2 V, IC = −1 A
VCE = −2 V, IC = −7 A
IC = −5 A, IB = − 250 mA
IC = −4 A, Resistance loaded
IB1 = − 0.4 A, IB2 = 0.4 A
VCC = −40 V
50 V
100 µA
100 µA
200
100
0.5 V
0.5 µs
1.0 µs
0.15 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
SJD00285BED
1



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2SA2064 pdf
2SA2064
This product complies with the RoHS Directive (EU 2002/95/EC).
35
30
(1)
25
PC Ta
(1) TC = Ta
(2) Without heat sink
20
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VBE
7
VCE = −2 V
6
5
4
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) IC
10 IC / IB = 20
1
0.1
0.01
0.001
0.1
1
Collector current IC (A)
10
hFE IC
Safe operation area
10 000
Ta = 25°C
VCE = −2 V
100
ICP
Non repetitive pulse
TC = 25°C
IC
10
t = 1 ms
1 000
t=1s
t = 10 ms
1
100
0.1
10
0.001 0.01 0.1 1 10
Collector current IC (A)
100
0.01
1
10
100
1 000
Collector to emitter voltage VCE (V)
Rth t
1 000 Ta = 25°C
100
(1)
10 (2)
1
0.1
0.001
0.01
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
0.1 1 10 100 1 000
Time t (s)
2 SJD00285BED



Part Number 2SA2064
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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