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Panasonic Electronic Components Datasheet


2SA2057

Silicon PNP epitaxial planar type



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2SA2057 pdf
Power Transistors
2SA2057
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
Features
High speed switching (tstg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)
Superior forward current transfer ratio hFE linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current *
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
60
60
6
3
6
20
2.0
150
55 to +150
Note) *: Non-repetitive peak collector current
Unit
V
V
V
A
A
W
°C
°C
2.54±0.30
5.08±0.50
123
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
C
B
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
ton
tstg
tf
IC = −10 mA, IB = 0
VCB = −60 V, IE = 0
VCE = −60 V, IB = 0
VEB = −6 V, IC = 0
VCE = −4 V, IC = −1 A
VCE = −4 V, IC = −3 A
IC = −3 A, IB = − 0.375 A
VCE = −10 V, IC = − 0.1 A, f = 10 MHz
IC = −1 A, Resistance loaded
IB1 = − 0.1 A, IB2 = 0.1 A
VCC = 50 V
60
120
40
100
100
1
320
0.5
90
0.15 0.30
0.4 0.7
0.10 0.15
V
µA
µA
mA
V
MHz
µs
µs
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1 120 to 250 160 to 320
Publication date: January 2003
SJD00284BED
1



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2SA2057 pdf
2SA2057
PC Ta
35
(1) TC = Ta
(2) Without heat sink
30
25
(1)
20
15
10
5
(2)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
IC VBE
VCE = −4 V
6
Ta = 100°C
25°C
4
2 25°C
VCE(sat) IC
10 IC / IB = 8
1
0.1
25°C
0.01
Ta = 100°C
25°C
0
0 0.4 0.8 1.2
Base-emitter voltage VBE (V)
0.001
0.01
0.1 1
Collector current IC (A)
10
10 000
hFE IC
VCE = −4 V
1 000
25°C
100
Ta = 100°C
25°C
Safe operation area
100
Non repetitive pulse
TC = 25°C
10 ICP
t = 10 ms
IC
1
t=1s
t = 1 ms
10 0.1
1
0.01
0.1 1
Collector current IC (A)
10
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
Rth t
1 000 Ta = 25°C
100
(1)
(2)
10
1
0.1
0.001
0.01
(1) Without heat sink
(2) With 100 × 100 × 2 mm Al
0.1 1 10 100 1 000
Time t (s)
2 SJD00284BED



Part Number 2SA2057
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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