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Panasonic Electronic Components Datasheet


2SA2009

Silicon PNP epitaxial planer type


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2SA2009 pdf
Transistors
2SA2009
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
I Features
High collector to emitter voltage VCEO
Low noise voltage NV
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
120
120
5
50
20
150
150
55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
S Mini Type Package (3-pin)
Marking Symbol: AR
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Noise voltage
ICBO
ICEO
VCBO
VCEO
VEBO
hFE
VCE(sat)
NV
Transition frequency
fT
VCB = −50 V, IE = 0
100 nA
VCE = −50 V, IB = 0
1 µA
IC = −10 µA, IE = 0
120
V
IC = −1 mA, IB = 0
120
V
IE = −10 µA, IC = 0
5
V
VCE = −5 V, IC = −2 mA
180 700
IC = −20 mA, IB = −2 mA
0.6 V
VCE = −40 V, IC = −1 mA, GV = 80 dB
Rg = 100 kW, Function = FLAT
130
mV
VCB = −5 V, IE = 2 mA, f = 200 MHz
120
MHz
Note) *: Rank classification
Rank
R
S
T
hFE 180 to 360 260 to 520 360 to 700
1



Part Number 2SA2009
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 1 Pages
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