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Panasonic Electronic Components Datasheet


2SA2004

Silicon PNP epitaxial planer type


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2SA2004 pdf
Power Transistors
2SA2004
Silicon PNP epitaxial planer type
For power amplification
I Features
High forward current transfer ratio hFE
Satisfactory linearity of forward current transfer ratio hFE
Dielectric breakdown voltage of the package: > 5 kV
High-speed switching
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
60
60
5
16
8
20
2.0
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D Package
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Turn-on time
Storage time
Fall time
ICBO
ICEO
VCEO
hFE1
hFE2
VCE(sat)
VBE(sat)
ton
tstg
tf
VCB = −60 V, IE = 0
VCE = −60 V, IE = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = − 0.1 A
VCE = −2 V, IC = −5 A
IC = −5 A, IB = − 0.25 A
IC = −5 A, IC = − 0.25 A
IC = −4 A, IB1 = −400 mA
IB2 = 400 mA, VCC = 50 V
Min Typ Max Unit
100 µA
100 µA
60 V
100 230
30
1.2 V
1.7 V
0.2 0.5
µs
0.1 0.15 µs
0.5 1.0
µs
1



Part Number 2SA2004
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 1 Pages
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