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Panasonic Electronic Components Datasheet


2SA1982

Silicon PNP epitaxial planer type



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2SA1982 pdf
Transistor
2SA1982
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC5346
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–150
V
Collector to emitter voltage VCEO
–150
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–100
mA
Collector current IC –50 mA
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55~+150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
ICBO VCB = –100V, IE = 0
–1 µA
Collector to emitter voltage
VCEO
IC = –0.1mA, IB = 0
–150
V
Emitter to base voltage
Forward current transfer ratio
VEBO
hFE*1
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
–5 V
130 330
Collector to emitter saturation voltage VCE(sat)
IC = –30mA, IB = –3mA
–1 V
Noise voltage
NV VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 300 mV
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
5 pF
*1hFE Rank classification
Rank
R
S
hFE 130 ~ 220 185 ~ 330
1



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2SA1982 pdf
Transistor
PC — Ta
2.0
Printed circut board: Copper
foil area of 1cm2 or more, and
1.6
the board thickness of 1.7mm
for the collector portion.
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
hFE — IC
300
VCE=–5V
250
Ta=75˚C
200 25˚C
150 –25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
IC — VCE
–90
Ta=25˚C
–75
– 0.9mA IB=–1.0mA
–60 – 0.8mA
– 0.7mA
– 0.6mA
–45 – 0.5mA
– 0.4mA
– 0.3mA
– 0.2mA
–30
– 0.1mA
–15
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1982
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
2



Part Number 2SA1982
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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