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Panasonic Electronic Components Datasheet


2SA1806

Silicon PNP epitaxial planer type


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2SA1806 pdf
Transistor
2SA1806
Silicon PNP epitaxial planer type
For high speed switching
Unit: mm
s Features
q High-speed switching.
q Low collector to emitter saturation voltage VCE(sat).
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–15
–15
–4
–100
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mA
mW
˚C
˚C
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AK
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
IEBO
hFE1*
hFE2
VCB = –8V, IE = 0
VEB = –3V, IC = 0
VCE = –1V, IC = –10mA
VCE = –1V, IC = –1mA
– 0.1 µA
– 0.1 µA
50 150
30
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = – 1mA
– 0.1 – 0.2
V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz 800 1500
MHz
Collector output capacitance
Cob
VCB = –5V, IE = 0, f = 1MHz
1 pF
Turn-on time
ton (Note 1) Next page
12 ns
Turn-off time
toff (Note 1) Next page
20 ns
Storage time
tstg (Note 1) Next page
19 ns
*hFE1 Rank classification
Rank
hFE1
Marking Symbol
Q
50 ~ 120
AKQ
R
90 ~ 150
AKR
1



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2SA1806 pdf
Transistor
Switching time measurement circuit
ton, toff Test Circuit
VBB
2k
0.1µF 52
Vin
51
VCC=–1.5V
62
Vout
Vin
tstg Test Circuit
VBB=–10V
508
0.1µF 34
VCC=–3V
30
Vout
51
0
Vin
Vout
10%
90%
90% 10%
ton toff
Vin=–5.8V Vin=9.8V
VBB=Ground VBB=–8.0V
0
Vin
Vout
90%
90%
toff
Vin=9.0V
2SA1806
PC — Ta
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–60
Ta=25˚C
–50 IB=–600µA
–500µA
–40 –400µA
–300µA
–30
–200µA
–20
–100µA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
hFE — IC
240
VCE=–10V
200
160
120
Ta=75˚C
80
25˚C
40 –25˚C
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
–100
–30
–10
–3
–1
VCE(sat) — IC
IC/IB=10
Ta=75˚C
25˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3 Ta=–25˚C
25˚C
–1 75˚C
– 0.3
– 0.1
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
2400
2000
fT — IE
VCB=–10V
f=200MHz
Ta=25˚C
1600
1200
800
400
0
13
10 30 100
Emitter current IE (mA)
Cob — VCB
2.4
IE=0
f=1MHz
Ta=25˚C
2.0
1.6
1.2
0.8
0.4
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2



Part Number 2SA1806
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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