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Panasonic Electronic Components Datasheet


2SA1791

Silicon PNP epitaxial planer type


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2SA1791 pdf
Transistor
2SA1791
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC4656
s Features
q High transition frequency fT.
q Small collector output capacitance Cob.
q SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
–50
–50
–5
–50
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
1.6±0.15
0.4 0.8±0.1 0.4
1
3
2
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
Marking symbol : AL
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
– 0.1 µA
–100 µA
–50 V
Collector to emitter voltage
Emitter to base voltage
VCEO
VEBO
IC = –1mA, IB = 0
IE = –10µA, IC = 0
–50
–5
V
V
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
200 500
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1 – 0.3
V
Transition frequency
fT VCB = –10V, IE = 2mA, f = 200MHz 250 MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
1.5 pF
*hFE Rank classification
Rank
hFE
Marking Symbol
Q
200 ~ 400
ALQ
R
250 ~ 500
ALR
1



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2SA1791 pdf
Transistor
PC — Ta
150
125
100
75
50
25
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–120
–100
IC — VCE
Ta=25˚C
–80 IB=–300µA
–250µA
–60 –200µA
–150µA
–40
–100µA
–20
–50µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
600
VCE=–10V
500
Ta=75˚C
400
25˚C
–25˚C
300
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
2SA1791
IC — VBE
–60
VCE=–10V
25˚C
–50
Ta=75˚C
–25˚C
–40
–30
–20
–10
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 –1.2
Base to emitter voltage VBE (V)
fT — IE
600
VCB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2



Part Number 2SA1791
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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