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Panasonic Electronic Components Datasheet


2SA1762

Silicon PNP epitaxial planer type



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2SA1762 pdf
Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
s Features
q High collector to emitter voltage VCEO.
q Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1 A
Collector current
IC
– 0.5
A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1 MHz
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
130 330
50 100
– 0.2 – 0.4
V
– 0.85 –1.2
V
85 MHz
11 20 pF
*hFE1 Rank classification
Rank
R
S
hFE1 130 ~ 220 185 ~ 330
1



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2SA1762 pdf
Transistor
PC — Ta
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
1.0 the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1762
IC — IB
–1.2
–1.0
VCE=–10V
Ta=25˚C
– 0.8
– 0.6
– 0.4
– 0.2
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
VCE(sat) — IC
–10
IC/IB=10
–30
–10
–3
–1
– 0.3
– 0.1
25˚C
Ta=75˚C
–25˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
120
VCB=–10V
f=200MHz
Ta=25˚C
100
80
60
40
20
0
1 3 10 30 100 300 1000
Emitter current IE (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
60
IE=0
f=1MHz
Ta=25˚C
50
40
30
20
10
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
300
VCE=–10V
250
200 Ta=75˚C
25˚C
150
–25˚C
100
50
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
ICBO — Ta
104
VCB=–20V
103
102
10
1
0 60 120 180
Ambient temperature Ta (˚C)
2



Part Number 2SA1762
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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