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Panasonic Electronic Components Datasheet


2SA1674

Silicon PNP epitaxial planer type


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2SA1674 pdf
Transistor
2SA1674
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC4391
s Features
q Low collector to emitter saturation voltage VCE(sat).
q High collector to emitter voltage VCEO.
q Allowing supply with the radial taping.
6.9±0.1
0.7 4.0
Unit: mm
1.05 2.5±0.1
±0.05
(1.45)
0.8
0.65 max.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1.5 A
Collector current
IC
–1 A
Collector power dissipation (TC=25˚C)
PC*
1
W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
+0.1
0.45–0.05
2.5±0.5 2.5±0.5
123
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2±0.1
0.45+–00..105
0.65
max.
(HW type)
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –40V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –100mA
VCE = –2V, IC = –500mA*2
IC = –500mA, IB = –50mA*2
IC = –500mA, IB = –50mA*2
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
R
S
hFE1 120 ~ 240 170 ~ 340
min typ max Unit
– 0.1 µA
–80 V
–80 V
–5 V
120 340
60
– 0.2 – 0.3
V
– 0.85 –1.2
V
120 MHz
15 30 pF
*2 Pulse measurement
1



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2SA1674 pdf
Transistor
PC — Ta
1.2
Printed circut board: Copper
foil area of 1cm2 or more, and
1.0 the board thickness of 1.7mm
for the collector portion.
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
75˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
60
IE=0
f=1MHz
Ta=25˚C
50
40
30
20
10
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–1.2
–1.0
– 0.8
– 0.6
– 0.4
IC — VCE
Ta=25˚C
IB=–8mA –7mA
–6mA
–5mA
–4mA
–3mA
–2mA
– 0.2
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1674
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
Ta=75˚C
25˚C
–25˚C
– 0.003
– 0.001
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
500
VCE=–2V
450
400
350
300
Ta=75˚C
250
200 25˚C
150 –25˚C
100
50
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
200 VCB=–10V
180 Ta=25˚C
160
140
120
100
80
60
40
20
0
1
3
10 30
100
Emitter current IE (mA)
2



Part Number 2SA1674
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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