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Panasonic Electronic Components Datasheet


2SA1619A

Silicon PNP epitaxial planer type



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2SA1619A pdf
Transistor
2SA1619, 2SA1619A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
s Features
q Complementary pair with 2SC4208 and 2SC4208A.
q Allowing supply with the radial taping and automatic insertion
possible.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SA1619
base voltage 2SA1619A
Collector to 2SA1619
emitter voltage 2SA1619A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1
– 0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
+0.15
0.45 –0.1
+0.15
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base 2SA1619
voltage
2SA1619A
ICBO
VCBO
Collector to emitter 2SA1619
voltage
VCEO
2SA1619A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –10V, IC = –500mA
IC = –300mA, IB = –30mA
IC = –300mA, IB = –30mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 160 340
40
– 0.35 – 0.6
V
–1.1 –1.5
V
200 MHz
6 15 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1



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2SA1619A pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
240
VCB=–10V
Ta=25˚C
200
160
120
80
40
0
1 3 10 30 100
Emitter current IE (mA)
–800
–700
–600
–500
–400
–300
–200
IC — VCE
Ta=25˚C
IB=–10mA –9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
–100
0
0 –4 –8 –12 –16 –20
Collector to emitter voltage VCE (V)
2SA1619, 2SA1619A
–800
–700
IC — IB
VCE=–10V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 –2 –4 –6 –8 –10
Base current IB (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
75˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
24
IE=0
f=1MHz
Ta=25˚C
20
16
12
8
4
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
hFE — IC
600
VCE=–10V
500
400
300
Ta=75˚C
200 25˚C
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
–120
–100
VCER — RBE
IC=–2mA
Ta=25˚C
–80
–60
2SA1619A
–40
2SA1619
–20
0
1 3 10 30 100 300 1000
Base to emitter resistance RBE (k)
2



Part Number 2SA1619A
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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