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Panasonic Electronic Components Datasheet


2SA1535A

Silicon PNP epitaxial planar type



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2SA1535A pdf
Power Transistors
2SA1535, 2SA1535A
Silicon PNP epitaxial planar type
For low-frequency driver and high power amplification
Complementary to 2SC3944 and 2SC3944A
s Features
q Satisfactory foward current transfer ratio hFE vs. collector cur-
rent IC characteristics
q High transition frequency fT
q Makes up a complementary pair with 2SC3944 and 2SC3944A,
which is optimum for the driver-stage of a 60 to 100W output
amplifier.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SA1535
base voltage 2SA1535A
Collector to 2SA1535
emitter voltage 2SA1535A
VCBO
VCEO
–150
–180
–150
–180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
–5
–1.5
–1
15
2.0
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current 2SA1535
Collector to emitter 2SA1535
voltage
2SA1535A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCEO
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = –150V, IE = 0
IC = –1mA, IB = 0
IC = –100µA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA
VCE = –5V, IC = –500mA
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCE = –10V, IC = –50mA, f = 10MHz
VCB = –10V, IE = 0, f = 1MHz
*hFE1 Rank classification
Rank
Q
R
hFE1 90 to 155 130 to 220
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
–10 µA
–150
–180
V
–5 V
90 160 220
50 100
– 0.5 –2.0
V
–1.0 –2.0
V
200 MHz
30 50 pF
1



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2SA1535A pdf
Power Transistors
PC — Ta
32
Without heat sink
28
24
20
16
12
8
4
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
–3 IC/IB=10
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
Collector current IC (A)
–1
1000
hFE — IC
VCE=–10V
300 25˚C
TC=–25˚C
100
100˚C
30
10
3
1
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
fT — IE
400
VCB=–10V
f=10MHz
TC=25˚C
300
200
100
0
0.01 0.03 0.1 0.3
Emitter current IE (A)
1
Area of safe operation (ASO)
–10
–3 ICP
–1
IC
– 0.3
– 0.1
DC
10ms
Single pulse
TC=25˚C
t=1ms
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2SA1535, 2SA1535A
VBE(sat) — IC
IC/IB=10
–10
–3
–1
– 0.3
– 0.1
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
Collector current IC (A)
–3
Cob — VCB
100
IE=0
f=1MHz
TC=25˚C
80
60
40
20
0
–1 –3
–10 –30 –100
Collector to base voltage VCB (V)
2



Part Number 2SA1535A
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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