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Panasonic Electronic Components Datasheet


2SA1534

Silicon PNP epitaxial planer type



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2SA1534 pdf
Transistor
2SA1534, 2SA1534A
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC3940 and 2SC3940A
s Features
q Complementary pair with 2SC3940 and 2SC3940A.
q Allowing supply with the radial taping and automatic insertion
possible.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to 2SA1534
base voltage 2SA1534A
Collector to 2SA1534
emitter voltage 2SA1534A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
0.7±0.1
1.27
0.45
+0.15
–0.1
0.45
+0.15
–0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
TO–92NL Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base 2SA1534
voltage
2SA1534A
ICBO
VCBO
Collector to emitter 2SA1534
voltage
VCEO
2SA1534A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
VEBO
hFE1*
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –500mA
VCE = –5V, IC = –1A
IC = –500mA, IB = –50mA
IC = –500mA, IB = –50mA
VCB = –10V, IE = 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min typ max Unit
– 0.1 µA
–30
V
–60
–25
V
–50
–5 V
85 340
50
– 0.2 – 0.4
V
– 0.85 –1.2
V
200 MHz
20 30 pF
*hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S
170 ~ 340
1



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2SA1534 pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
200 VCB=–10V
180 Ta=25˚C
fT — IE
160
140
120
100
80
60
40
20
0
1 3 10 30 100
Emitter current IE (mA)
–1.5
–1.25
–1.0
– 0.75
– 0.5
– 0.25
IC — VCE
Ta=25˚C
IB=–10mA
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1534, 2SA1534A
IC — IB
–1.2
–1.0
VCE=–10V
Ta=25˚C
– 0.8
– 0.6
– 0.4
– 0.2
0
0 –2 –4 –6 –8 –10 –12
Base current IB (mA)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
75˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
50
IE=0
45 f=1MHz
Ta=25˚C
40
35
30
25
20
15
10
5
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
–600
–500
hFE — IC
VCE=–10V
–400
Ta=75˚C
–300
–200
25˚C
–25˚C
–100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
–120
–100
VCER — RBE
IC=–10mA
Ta=25˚C
–80
–60
2SA1534A
–40
2SA1534
–20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance RBE (k)
2



Part Number 2SA1534
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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