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Panasonic Electronic Components Datasheet


2SA1512

Silicon PNP epitaxial planer type



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2SA1512 pdf
Transistor
2SA1512
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SC1788
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Optimum for low-voltage operation and for converters.
q Allowing supply with the radial taping.
q Optimum for high-density mounting.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–25
–20
–7
–1
– 0.5
300
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
4.0±0.2
Unit: mm
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
VCB = –25V, IE = 0
–100 nA
VCE = –20V, IB = 0
–1 µA
IC = –10µA, IE = 0
–25
V
IC = –1mA, IB = 0
–20
V
IE = –10µA, IC = 0
–7
V
VCE = –2V, IC = –0.5A*2
90 220
VCE = –2V, IC = –1A*2
25
IC = –500mA, IB = –50mA*2
– 0.4
V
IC = –500mA, IB = –50mA*2
–1.2 V
VCB = –10V, IE = 50mA, f = 200MHz 150 MHz
VCB = –10V, IE = 0, f = 1MHz
15 25 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 90 ~ 155 130 ~ 220
1



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2SA1512 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VBE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=–25˚C
25˚C
75˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
80
IE=0
70 f=1MHz
Ta=25˚C
60
50
40
30
20
10
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–1.2
Ta=25˚C
–1.0
– 0.8
– 0.6
– 0.4
IB=–10µA
–9µA
–8µA
–7µA
–6µA
–5µA
–4µA
–3µA
–2µA
– 0.2
–1µA
0
0 –1 –2 –3 –4 –5 –6
Collector to emitter voltage VCE (V)
2SA1512
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
600
VCE=–2V
500
400
300 Ta=75˚C
25˚C
200
–25˚C
100
0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
fT — IE
320
VCB=–10V
Ta=25˚C
280
240
200
160
120
80
40
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2



Part Number 2SA1512
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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