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Panasonic Electronic Components Datasheet


2SA1499

Silicon PNP epitaxial planar type Power Transistors



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2SA1499 pdf
Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q High foward current transfer ratio hFE
q High-speed switching
q High collector to base voltage VCBO
q Full-pack package which can be installed to the heat sink with
one screw.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO
VCEO
VEBO
ICP
IC
PC
–400
–400
–7
–1.2
– 0.6
25
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO VCB = –400V, IE = 0
IEBO VEB = –7V, IC = 0
–100
–100
µA
µA
Collector to emitter voltage
Forward current transfer ratio
VCEO
hFE1*
hFE2
IC = –10mA, IB = 0
VCE = –5V, IC = –100mA
VCE = –5V, IC = –300mA
–400
30
10
V
160
Collector to emitter saturation voltage VCE(sat)
Base to emitter saturation voltage VBE(sat)
IC = –300mA, IB = –60mA
IC = –300mA, IB = –60mA
–1.0 V
–1.2 V
Transition frequency
Turn-on time
Storage time
Fall time
fT VCE = –10V, IC = –100mA, f = 1MHz
ton IC = –300mA,
tstg IB1 = –60mA, IB2 = 60mA,
tf VCC = –100V
15 MHz
1.0 µs
3.5 µs
1.0 µs
*hFE1 Rank classification
Rank
Q
P
hFE1 30 to 60 50 to 100
O
80 to 160
1



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2SA1499 pdf
Power Transistors
PC — Ta
40
35
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
30 (3) Without heat sink
(PC=2.0W)
25
20
(1)
15
10
(2)
5
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
– 0.8
– 0.7
– 0.6
IC — VCE
TC=25˚C
IB=–40mA
– 0.5
– 0.4
–10mA
–8mA
–6mA
– 0.3
– 0.2
– 0.1
–4mA
–2mA
–1mA
0
0 –1 –2 –3 –4 –5 –6 –7 –8
Collector to emitter voltage VCE (V)
2SA1499
–100
–30
–10
VCE(sat) — IC
IC/IB=5
–3
–1
– 0.3
– 0.1
TC=100˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
–3
–1
– 0.3
– 0.1
VBE(sat) — IC
IC/IB=5
TC=–25˚C
100˚C
25˚C
– 0.03
– 0.01
– 0.01 – 0.03
– 0.1
– 0.3
Collector current IC (A)
–1
10000
3000
1000
hFE — IC
VCE=–5V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
–1
1000
300
100
fT — IC
VCE=–10V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
– 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3
Collector current IC (A)
–1
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30 IC/IB=5(–IB1=IB2)
VCC=–100V
10 TC=25˚C
tstg
3
1
tf
0.3
ton
0.1
0.03
0.01
0
– 0.2 – 0.4 – 0.6 – 0.8 –1.0
Collector current IC (A)
Area of safe operation (ASO)
–10
–3
ICP
–1
IC
– 0.3
– 0.1
Non repetitive pulse
TC=25˚C
t=1ms
1s 10ms
– 0.03
– 0.01
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector to emitter voltage VCE (V)
2



Part Number 2SA1499
Description Silicon PNP epitaxial planar type Power Transistors
Maker Panasonic - Panasonic
Total Page 3 Pages
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