http://www.www.datasheet4u.com

900,000+ Datasheet PDF Search and Download

Datasheet4U offers most rated semiconductors datasheets pdf



Panasonic Electronic Components Datasheet


2SA1323

Silicon PNP epitaxial planer type


No Preview Available !

2SA1323 pdf
Transistor
2SA1323
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC3314
s Features
q Allowing supply with the radial taping.
q High transition frequency fT.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–60
–30
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
ICEO
IEBO
hFE*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
– 0.1 µA
–100 µA
–10 µA
70 220
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1
V
Base to emitter voltage
VBE VCE = –10V, IC = –1mA
– 0.7
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
2.8 4.0 dB
22 50
Common emitter reverse transfer capacitanse Cre
VCE = –10V, IC = –1mA, f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1



No Preview Available !

2SA1323 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
Ta=75˚C
25˚C
–25˚C
– 0.03
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
5
f=1MHz
IE=0
Ta=25˚C
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–24
Ta=25˚C
–20 IB=–250µA
–200µA
–16
–150µA
–12
–100µA
–8
–50µA
–4
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
–120
–100
–80
–60
hFE — IC
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–40
–20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cre — VCE
6
IC=–1mA
f=10.7MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to emitter voltage VCE (V)
2SA1323
IC — VBE
–60
VCE=–10V
–50
–40
25˚C
Ta=75˚C –25˚C
–30
–20
–10
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
400
Ta=25˚C
350 VCB=–10V
300
250
200
150
100
50
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
PG — IC
24
VCE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
2



Part Number 2SA1323
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
PDF Download
2SA1323 pdf
Download PDF File
2SA1323 pdf
View for Mobile




Featured Datasheets

Part Number Description Manufacturers PDF
2SA1300 TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) 2SA1300
Toshiba Semiconductor
PDF
2SA1300 PNP EPITAXIAL SILICON TRANSISTOR 2SA1300
UTC
PDF
2SA1300 Plastic-Encapsulated Transistors 2SA1300
TRANSYS
PDF
2SA1300 PNP EPITAXIAL PLANAR TRANSISTOR 2SA1300
Dc Components
PDF
2SA1300 PNP Plastic Encapsulated Transistor 2SA1300
SeCoS
PDF
2SA1301 PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) 2SA1301
Wing Shing Computer Components
PDF


Part Number Start With

0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z

site map

webmaste! click here

contact us

Buy Components