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Panasonic Electronic Components Datasheet


2SA1309A

Silicon PNP epitaxial planer type



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2SA1309A pdf
Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
s Features
q High foward current transfer ratio hFE.
q Allowing supply with the radial taping.
q Optimum for high-density mounting.
4.0±0.2
Unit: mm
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–50
–7
–200
–100
300
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
marking
123
1.27 1.27
2.54±0.15
1:Emitter
2:Collector
3:Base
EIAJ:SC–72
New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Cob
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –2mA
IC = –50mA, IB = –5mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
–60
–50
–7
160
–100 nA
–1 µA
V
V
V
460
– 0.3
V
80 MHz
3.5 pF
*hFE Rank classification
Rank
Q
hFE 160 ~ 260
R
210 ~ 340
S
290 ~ 460
1



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2SA1309A pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
–10
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
– 0.01
25˚C
Ta=75˚C
–25˚C
– 0.003
– 0.001
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
120
Ta=25˚C
100
80
IB=–300µA
60 –250µA
–200µA
40 –150µA
–100µA
20
–50µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1309A
–240
–200
IC — VBE
VCE=–5V
–160
–120
25˚C
Ta=75˚C –25˚C
–80
–40
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
400
Ta=75˚C
300 25˚C
–25˚C
200
100
0
–1 –3 –10 –30 –100 –300 –1000
Collector current IC (mA)
fT — IE
160
VCB=–10V
Ta=25˚C
140
120
100
80
60
40
20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Emitter current IE (mA)
2



Part Number 2SA1309A
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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