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Panasonic Electronic Components Datasheet


2SA1254

Silicon PNP epitaxial planer type



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2SA1254 pdf
Transistor
2SA1254
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC2206
s Features
q High transition frequency fT.
q Low collector to emitter saturation voltage VCE(sat).
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–20
–5
–60
–30
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
6.9±0.1
1.5
1.5 R0.9
R0.9
Unit: mm
2.5±0.1
1.0
0.85
0.55±0.1
321
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
ICBO
ICEO
IEBO
hFE*
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
– 0.1 µA
–100 µA
–10 µA
70 220
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz 150
300
MHz
Collector to emitter saturation voltage VCE(sat)
IC = –10mA, IB = –1mA
– 0.1
V
Base to emitter voltage
VBE VCE = –10V, IC = –1mA
– 0.7
V
Noise figure
Reverse transfer impedance
NF
Zrb
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
2.8 4.0 dB
22 50
Common emitter reverse transfer capacitance Cre
VCE = –10V, IC = –1mA, f = 10.7MHz
1.2 2.0 pF
*hFE Rank classification
Rank
B
hFE 70 ~ 140
C
110 ~ 220
1



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Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–120
–100
–80
–60
hFE — IC
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–40
–20
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
600
VCB=–10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
IC — VCE
–30
Ta=25˚C
–25
–20 IB=–250µA
–200µA
–15
–150µA
–10 –100µA
–5 –50µA
0
0 –2 –4 –6 –8 –10
Collector to emitter voltage VCE (V)
2SA1254
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
Ta=75˚C
25˚C
– 0.1
– 0.03
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
PG — IC
24
VCE=–10V
f=100MHz
Ta=25˚C
20
16
12
8
4
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cre — VCE
5
IC=–1mA
f=10.7MHz
Ta=25˚C
4
3
2
1
0
–1 –3
–10 –30 –100
Collector to emitter voltage VCE (V)
NF — IE
5
VCB=–10V
f=100MHz
Ta=25˚C
4
3
2
1
0
0.1 0.3 1 3 10
Emitter current IE (mA)
2



Part Number 2SA1254
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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