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Panasonic Electronic Components Datasheet


2SA1127

Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)



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2SA1127 pdf
Transistor
2SA1127
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2634
s Features
q Low noise characteristics.
q High foward current transfer ratio hFE.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–60
–55
–7
–200
–100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
5.0±0.2
Unit: mm
4.0±0.2
+0.2
0.45 –0.1
1.27
+0.2
0.45 –0.1
1.27
123
2.54±0.15
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
VBE
fT
Noise voltage
NV
VCB = –10V, IE = 0
–1 –100 nA
VCE = –10V, IB = 0
– 0.01 –1
µA
IC = –10µA, IE = 0
–60
V
IC = –1mA, IB = 0
–55
V
IE = –10µA, IC = 0
–7
V
VCE = –5V, IC = –2mA
180 700
IC = –100mA, IB = –10mA
– 0.6
V
VCE = –1V, IC = –30mA
–1 V
VCB = –5V, IE = 2mA, f = 200MHz
200 MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*hFE Rank classification
Rank
R
hFE 180 ~ 360
S
260 ~ 520
T
360 ~ 700
1



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2SA1127 pdf
Transistor
PC — Ta
500
450
400
350
300
250
200
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
25˚C
Ta=75˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
10
IE=0
9 f=1MHz
Ta=25˚C
8
7
6
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–80
Ta=25˚C
–70
IB=–200µA
–60 –180µA
–160µA
–50 –140µA
–120µA
–40 –100µA
–30 –80µA
–60µA
–20
–40µA
–10 –20µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1127
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C –25˚C
VCE=–5V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
NV — IC
100
VCE=–10V
90 GV=80dB
Function=FLAT
80
70 Rg=100k
60
50
22k
40
30 5k
20
10
0
– 0.01 – 0.03
– 0.1
– 0.3
–1
Collector current IC (mA)
fT — IE
240
VCB=–5V
Ta=25˚C
200
160
120
80
40
0
1
3
10 30
100
Emitter current IE (mA)
2



Part Number 2SA1127
Description Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification)
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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