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Panasonic Electronic Components Datasheet


2SA1124

Silicon PNP epitaxial planer type


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2SA1124 pdf
Transistor
2SA1124
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2632
s Features
q Satisfactory foward current transfer ratio hFE collector current IC
characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2632, which is opti-
mum for the pre-driver stage of a 40 to 60W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–150
–5
–100
–50
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+–00..21
1.27
1.27
123
0.45+–00..21
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
ICBO
VCEO
VEBO
hFE*
VCE(sat)
VCB = –100V, IE = 0
IC = –0.1mA, IB = 0
IE = –10µA, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
–150
–5
130
–1 µA
V
V
450
–1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance
Noise voltage
Cob
NV
VCE = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
5 pF
150 300 mV
*hFE Rank classification
Rank
R
hFE 130 ~ 220
S
185 ~ 330
T
260 ~ 450
1



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2SA1124 pdf
Transistor
PC — Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
6
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)
IC — VCE
–80
Ta=25˚C
–70
–60
IB=–500µA
–450µA
–400µA
–350µA
–50 –300µA
–250µA
–40 –200µA
–30 –150µA
–100µA
–20
–50µA
–10
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1124
–120
–100
–80
IC — VBE
VCE=–5V
25˚C
Ta=75˚C –25˚C
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
400
Ta=75˚C
300
25˚C
200 –25˚C
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
fT — IE
300
VCB=–10V
Ta=25˚C
250
200
150
100
50
0
1
3
10 30
100
Emitter current IE (mA)
2



Part Number 2SA1124
Description Silicon PNP epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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