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Panasonic Electronic Components Datasheet


2SA1034

Silicon NPN epitaxial planer type


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2SA1034 pdf
Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Complementary to 2SC2405 and 2SC2406
s Features
q Low noise voltage NV.
q High foward current transfer ratio hFE.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
s Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
0.65±0.15
1
3
Parameter
Symbol
Ratings
Collector to 2SA1034
base voltage 2SA1035
VCBO
–35
–55
Collector to 2SA1034
emitter voltage 2SA1035
VCEO
–35
–55
Emitter to base voltage
VEBO
–5
Peak collector current
ICP
–100
Collector current IC –50
Collector power dissipation PC
200
Junction temperature
Tj
150
Storage temperature
Tstg –55 ~ +150
s Electrical Characteristics (Ta=25˚C)
Unit
V
V
V
mA
mA
mW
˚C
˚C
2
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
Marking symbol : F(2SA1034)
H(2SA1035)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base
voltage
2SA1034
2SA1035
ICBO
ICEO
VCBO
VCB = –10V, IE = 0
VCE = –10V, IB = 0
IC = –10µA, IE = 0
–100 nA
–1 µA
–35
V
–55
Collector to emitter 2SA1034
voltage
VCEO
2SA1035
IC = –2mA, IB = 0
–35
–55
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE
fT
Noise voltage
NV
*hFE1 Rank classification
IE = –10µA, IC = 0
–5
V
VCE = –5V, IC = –2mA
180 700
IC = –100mA, IB = –10mA*2
– 0.7 – 0.6
V
VCE = –1V, IC = –100mA*2
200 –1.0
V
VCB = –5V, IE = 2mA, f = 200MHz
MHz
VCE = –10V, IC = –1mA, GV = 80dB
Rg = 100k, Function = FLAT
150 mV
*2 Pulse measurement
Rank
RST
hFE
Marking 2SA1034
Symbol
2SA1035
180 ~ 360
FR
HR
260 ~ 520
FS
HS
360 ~ 700
FT
HT
1



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2SA1034 pdf
Transistor
PC — Ta
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
–800
–700
IB — VBE
VCE=–5V
Ta=25˚C
–600
–500
–400
–300
–200
–100
0
0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0
Base to emitter voltage VBE (V)
hFE — IC
600
VCE=–5V
500
Ta=75˚C
400
25˚C
300 –25˚C
200
100
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
–160
–140
–120
–100
–80
–60
–40
–20
IC — VCE
Ta=25˚C
IB=–350µA
–300µA
–250µA
–200µA
–150µA
–100µA
–50µA
0
0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
2SA1034, 2SA1035
–160
–140
IC — IB
VCE=–5V
Ta=25˚C
–120
–100
–80
–60
–40
–20
0
0 – 0.1 – 0.2 – 0.3 – 0.4 – 0.5
Base current IB (mA)
–120
–100
–80
IC — VBE
25˚C
Ta=75˚C –25˚C
VCE=–5V
–60
–40
–20
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Base to emitter voltage VBE (V)
fT — IE
500 VCB=–5V
450 Ta=25˚C
400
350
300
250
200
150
100
50
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
–100
–30
–10
VCE(sat) — IC
IC/IB=10
–3
–1
– 0.3
– 0.1
– 0.03
Ta=75˚C
25˚C
–25˚C
– 0.01
–0.1 –0.3 –1 –3 –10 –30 –100
Collector current IC (mA)
Cob — VCB
20
IE=0
18 f=1MHz
Ta=25˚C
16
14
12
10
8
6
4
2
0
– 0.1 – 0.3 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
2



Part Number 2SA1034
Description Silicon NPN epitaxial planer type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 3 Pages
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