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Panasonic Electronic Components Datasheet


2SA0886

Silicon PNP epitaxial planar type Transistor



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2SA0886 pdf
Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1847
Features
Output of 4 W can be obtained by a complementary pair with
2SC1847
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
50
40
5
1.5
3
1.2
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Conditions
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −10 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
IC = −1.5 A, IB = − 0.15 A
IC = −2 A, IB = − 0.2 A
VCB = −5 V, IE = 0.5 A, f = 200 MHz
VCB = 20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
50 V
40 V
1 µA
100 µA
10 µA
80 220
1.0 V
1.5 V
150 MHz
45 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE1
80 to 160
120 to 220
Publication date: February 2003
Note) The part numbers in the parenthesis show conventional part number.
SJD00003BED
1



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2SA0886 pdf
2SA0886
PC Ta
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
–4.0
TC=25˚C
–3.5 IB=–40mA
–35mA
–3.0 –30mA
–25mA
–2.5
–20mA
–2.0
–15mA
–1.5
–10mA
–1.0
–5mA
–0.5
0
0 –2 –4 –6 –8 –10
Collector-emitter voltage VCE (V)
VCE(sat) IC
IC/IB=10
–10
–1
TC=100˚C
–0.1
25˚C
–25˚C
–0.01
–0.01
–0.1 –1
Collector current IC (A)
VBE(sat) IC
IC/IB=10
–10
1000
–1 TC=–25˚C
100˚C
25˚C
–0.1
100
10
hFE IC
VCE=–5V
TC=100˚C
25˚C
–25˚C
–0.01
–0.01
–0.1 –1
Collector current IC (A)
1
–0.01
–0.1 –1
Collector current IC (A)
fT IE
240
VCB=–5V
f=200MHz
TC=25˚C
200
160
120
80
40
0
0.01 0.1
1
Emitter current IE (A)
10
Cob VCB
140 IE=0
f=1MHz
TC=25˚C
120
100
80
60
40
20
0
–1 –10 –100
Collector-base voltage VCB (V)
VCER RBE
–60
TC=25˚C
–50
–40
–30
–20
–10
0
0.001 0.01
0.1
1
10
Base-emitter resistance RBE (k)
ICEO Ta
1000
VCE=–12V
100
10
1
0 20 40 60 80 100 120
Ambient temperature Ta (°C)
2 SJD00003BED



Part Number 2SA0886
Description Silicon PNP epitaxial planar type Transistor
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 5 Pages
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