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Panasonic Electronic Components Datasheet


2SA0885

Silicon PNP epitaxial planar type



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2SA0885 pdf
Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
Features
Output of 3 W can be obtained by a complementary pair with
2SC1846
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
45
35
5
1
1.5
1.2
5.0 *
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Note) *: With a 100 × 100 × 2 mm Al heat sink
Unit
V
V
V
A
A
W
°C
°C
0.75±0.1
0.5±0.1
4.6±0.2
2.3±0.2
0.5±0.1 1.76±0.1
1: Emitter
123
2: Collector
3: Base
TO-126B-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
VCBO
VCEO
ICBO
ICEO
IEBO
hFE1 *
hFE2
VCE(sat)
fT
Cob
Conditions
IC = 10 µA, IE = 0
IC = 2 mA, IB = 0
VCB = −20 V, IE = 0
VCE = −20 V, IB = 0
VEB = −5 V, IC = 0
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
IC = −500 mA, IB = −50 mA
VCE = −10 V, IE = 50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
Min
45
35
85
50
Typ Max
0.1
100
10
340
0.5
200
20 30
Unit
V
V
µA
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
S
hFE1
85 to 170
120 to 240 170 to 340
Publication date: February 2003
Note) The part number in the parenthesis shows conventional part number.
SJD00002BED
1



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2SA0885 pdf
2SA0885
PC Ta
6
(1)With a 100 × 100 × 2 mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
(2)
1
0
0 40 80 120 160 200
Ambient temperature Ta (°C)
1.50
IC VCE
TC=25˚C
1.25
1.00
IB=–10mA
–9mA
–8mA
–7mA
0.75
0.50
–6mA
–5mA
–4mA
–3mA
0.25
–2mA
–1mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC IB
–1.2
VCE=–10V
TC=25˚C
–1.0
–0.8
–0.6
–0.4
–0.2
0
0 –2 –4 –6 –8 –10 –12
Base current IB (mA)
VCE(sat) IC
–10
IC/IB=10
–1
TC=100˚C
25˚C
–0.1
–25˚C
VBE(sat) IC
–10 IC/IB=10
–1 TC=–25˚C
100˚C
25˚C
–0.1
1 000
100
hFE IC
VCE=–10V
TC=100˚C
25˚C
–25˚C
10
–0.01
–0.01
–0.1 –1
Collector current IC (A)
–0.01
–0.01
–0.1 –1
Collector current IC (A)
1
–0.01
–0.1 –1
Collector current IC (A)
200
VCB=–10V
f=200MHz
TC=25˚C
160
fT IE
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE=0
f=1MHz
TC=25˚C
40
30
20
10
0
–1 –10 –100
Collector-base voltage VCB (V)
–100
–80
VCER RBE
IC=–10mA
TC=25˚C
–60
–40
–20
0
0.1 1 10 100
Base-emitter resistance RBE (k)
2 SJD00002BED



Part Number 2SA0885
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 5 Pages
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