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Panasonic Electronic Components Datasheet


2SA0684

Silicon PNP epitaxial planar type



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2SA0684 pdf
Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification and driver amplification 5.9±0.2 4.9±0.2
Complementary to 2SC1383, 2SC1384
Features
Allowing supply with the radial taping
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
VCBO
30
60
Collector-emitter voltage 2SA0683
(Base open)
2SA0684
VCEO
25
50
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VEBO
IC
ICP
PC
Tj
Tstg
5
1
1.5
1
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
0.7±0.1
0.45+–00..12
0.45+–00..12
(1.27)
(1.27)
1: Emitter
123
2: Collector
3: Base
2.54±0.15
EIAJ: SC-51
TO-92L-A1 Package
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
VCBO
IC = −10 µA, IE = 0
30
60
Collector-emitter voltage
(Base open)
2SA0683
2SA0684
VCEO
IC = −2 mA, IB = 0
25
50
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
5
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
0.1
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −500 mA
85 340
hFE2 VCE = −5 V, IC = −1 A
50
Collector-emitter saturation voltage
VCE(sat) IC = −500 mA, IB = −50 mA
0.2 0.4
Base-emitter saturation voltage
VBE(sat) IC = −500 mA, IB = −50 mA
0.85 1.20
Transition frequency
fT VCB = −10 V, IE = 50 mA, f = 200 MHz
200
Collector output capacitance
Cob VCB = −10 V, IE = 0, f = 1 MHz
(Common base, input open circuited)
20 30
Unit
V
V
V
µA
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
85 to 170
120 to 240 170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004
SJC00001CED
1



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2SA0684 pdf
2SA0683, 2SA0684
PC Ta
1.2
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160
Ambient temperature Ta (°C)
1.5
1.25
1.0
0.75
0.50
0.25
IC VCE
Ta = 25°C
IB = −10 mA
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
IC IB
1.2
VCE = −10 V
Ta = 25°C
1.0
0.8
0.6
0.4
0.2
0
0 2 4 6 8 10 12
Base current IB (mA)
VCE(sat) IC
100
IC / IB = 10
10
1
0.1
Ta = 75°C
25°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
100
10
1
0.1
VBE(sat) IC
IC / IB = 10
Ta = −25°C
75°C
25°C
0.01
0.01
0.1
1
Collector current IC (A)
10
hFE IC
600
VCE = −10 V
500
400
Ta = 75°C
300
25°C
200
25°C
100
0
0.01
0.1
1
Collector current IC (A)
10
fT IE
200 VCB = −10 V
Ta = 25°C
160
120
80
40
0
1 10 100
Emitter current IE (mA)
Cob VCB
50
IE = 0
f = 1 MHz
Ta = 25°C
40
30
20
10
0
1 10 100
Collector-base voltage VCB (V)
120
100
VCER RBE
IC = −10 mA
Ta = 25°C
80
60
2SA0684
40
2SA0683
20
0
0.1 1 10 100
Base-emitter resistance RBE (k)
2 SJC00001CED



Part Number 2SA0684
Description Silicon PNP epitaxial planar type
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 4 Pages
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