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Panasonic Electronic Components Datasheet


2PG402

Insulated Gate Bipolar Transistor



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2PG402 pdf
IGBTs
2PG402
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V
q Allowing to control large current: IC(peak) = 130A
q Housed in the surface mounting package
s Applications
q For flash-light for use in a camera
s Absolute Maximum Ratings (TC = 25°C)
Parameter
Symbol Ratings
Collector to emitter voltage
Gate to emitter voltage
Collector current
DC
Pulse
Allowable power
dissipation
TC = 25°C
Ta = 25°C
VCES
VGES
IC
ICP
PC
400
±8
5
130
10
1
Channel temperature
Storage temperature
Tch 150
Tstg 55 to +150
Unit
V
V
A
A
W
°C
°C
6.5±0.1
5.3±0.1
4.35±0.1
3.0±0.1
unit: mm
0.85±0.1
4.6±0.1
0.75±0.1 0.5±0.1
0.05 to 0.15
1.0±0.1
123
Marking
1: Emitter
2: Collector
3: Gate
U Type Package
s Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Collector to emitter cut-off current
Gate to emitter leakage current
Collector to emitter breakdown voltage
Gate threshold voltage
Collector to emitter
saturation voltage
Input capacitance (Common Emitter)
Turn-on time (delay time)
Rise time
Turn-off time (delay time)
Fall time
ICES
IGES
VCES
VGE(th)
VCE(sat)
Cies
td(on)
tr
td(off)
tf
VCE = 320V, VGE = 0
VGE = ±8V, VCE = 0
IC = 1mA, VGE = 0
VCE = 10V, IC = 1mA
VGE = 5V, IC = 5A
VGE = 5V, IC = 130A
VCE = 10V, VGE = 0, f = 1MHz
VCC = 300V, IC = 130A
VGE = 5V, Rg = 25
min typ max Unit
10 µA
±1 µA
400 V
0.5 1.5 V
2
V
10
1930
pF
130 ns
1.4 µs
350 ns
1.5 µs
1



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2PG402 pdf
IGBTs
IC VCE
200
TC=25˚C
160
VGE=8V 5V
120 4V
80 3V
40
2V
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
10000
1000
Cies, Coes, Cres VCE
f=1MHz
TC=25˚C
Cies
100
Coes
10 Cres
1
0 100 200 300 400
Collector to emitter voltage VCE (V)
VCE(sat) IC
10
VGE=5V
TC=25˚C
3
Ta=0˚C
1
25˚C
100˚C
0.3
0.1
0.01 0.1 1 10 100 1000
Collector current IC (A)
15
12
(1)
9
PC Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
6
(2)
3
(3)
0
0 25 50 75 100 125 150
Ambient temperature Ta (˚C)
2PG402
IC VGE
200 VCE=10V
TC=25˚C
160
120
80
40
0
0 2 4 6 8 10 12
Gate to emitter voltage VGE (V)
2



Part Number 2PG402
Description Insulated Gate Bipolar Transistor
Maker Panasonic Semiconductor - Panasonic Semiconductor
Total Page 2 Pages
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